Semiconductor device

ABSTRACT

A semiconductor device including: a resistive memory element; a data line electrically coupled to the resistive memory element; a control line; a power supply line; and a control circuit including a first constant current element, a first transistor, and a second transistor. In the control circuit, the first transistor has a gate coupled to the data line, one of a source and a drain coupled to the first constant current element, and the other one of the source and the drain coupled to the power supply line. The second transistor has a gate coupled to one of the source and the drain of the first transistor, one of a source and a drain coupled to the data line, and the other one of the source and the drain coupled to the control line.

TECHNICAL FIELD Reference to Related Application

This application is based upon and claims the benefit of priority ofJapanese patent application No. 2013-178337 filed on Aug. 29, 2013, thedisclosure of which is incorporated herein in its entirety by referencethereto.

Embodiments of the present invention relates to a semiconductor device.In particular, embodiments of the present invention relates to a readcircuit in a semiconductor device which uses resistive elements thatstore data by changing resistance.

BACKGROUND

Semiconductor devices using resistive elements have been studied anddeveloped, typical examples of which include an ReRAM (Resistive RandomAccess Memory), a PRAM (Phase Change Memory), and an STT-RAM (SpinTorque Transfer Random Access Memory). Memory element characteristics ofan ReRAM, a PRAM, and an STT-RAM are illustrated in FIG. 13 in JapanesePatent Kokai Publication No. 2008-65953A (PTL 2), FIGS. 17 and 18 inJapanese Patent Kokai Publication No. 2008-130166A (PTL 1), and FIG. 4in Japanese Patent Kokai Publication No. 2008-192274A (PTL 3),respectively.

A memory cell has a resistive element to which data is written byapplying a write voltage across the resistive element to cause a currentor an electric field. More specifically, the resistance value of theresistive element is changed by the amplitude or polarity of the writevoltage. In contrast, the memory cell is read by applying a read voltageacross the resistive element, for example, the voltage being smallerthan that used for writing. More specifically, data written in thememory cell is read by detecting whether the resistive element has lowresistance or high resistance on the basis of the amplitude of thecurrent that flows by the application of the read voltage. This readvoltage needs to be sufficiently small so that the data is not rewrittenand the resistance value of the resistive element is not changed.

Japanese Patent Kokai Publications Nos. 2002-216482A and 2007-133930Aare listed as PTL 4 and PTL 5, respectively.

The following analysis has been given from a viewpoint of embodiments ofthe present invention.

FIGS. 3 and 4 illustrate an exemplary embodiment of the presentinvention. Problems with the semiconductor devices according to therelated techniques will be described in view of FIGS. 3 and 4. Thesemiconductor devices according to the related techniques include dataline control circuits, one of which is illustrated in FIGS. 22A and 22Bas a prototype circuit, in place of data line control circuits 6 in FIG.3. In FIG. 3, each data line 3 is coupled to a plurality of multiplexers7. When a memory cell MC is read/written, a single multiplexer 7 isselectively activated for each data line 3. As a result, a single bitline BL is electrically coupled to each data line 3. Since each dataline 3 extends for a long distance as illustrated in FIG. 3, each dataline 3 has large parasitic capacitance.

FIG. 4 is a circuit diagram of a part of a memory array 8 in FIG. 3. Amemory cell MC is arranged at each intersection of a bit line BL and aword line WL. When a memory cell MC is read, VSS is supplied to a sourceplate SP and a voltage of a read reference signal VREADREF is suppliedto a corresponding data line 3. In this way, the voltage of the readreference signal VREADREF is applied across the resistive memory element2 of the memory cell MC located at the intersection of a selected wordline WL and a selected bit line BL.

The following two conditions need to be satisfied to read a memory cellMC at high speed. The first condition is charging a corresponding dataline 3 with the voltage of the read reference signal VREADREF at highspeed. Since the data lines 3 have large parasitic capacitance, acurrent drive circuit having a large current drive capability isnecessary.

The second condition is acquiring a larger read current by setting alarger voltage as the voltage of the read reference signal VREADREF.However, the voltage of the read reference signal VREADREF needs to belimited so that the resistance value of the corresponding resistivememory element 2 is not changed when the memory cell MC is read. Namely,it is desirable to increase the setting voltage VREADREF to a voltagelevel that is close to a voltage limit by accurately controlling thecharging so that the difference between the voltage limit and thesetting voltage VREADREF is small. Thus, in the above chargingoperation, it is required that the data line 3 be charged up to thesetting voltage VREADREF without causing an overshoot and withoutinfluencing the resistance value of the resistive memory element 2.

To satisfy the above first and second conditions, a read circuitincluding a feedback circuit using a differential amplifier is widelyused (see FIG. 6 in PTL 3 and FIG. 11 in PTL 1). In addition, FIG. 44Bin PTL 4 illustrates a general circuit as a specific circuit of adifferential amplifier.

FIGS. 22A and 22B are circuit diagrams of a data line control circuitconfigured according to the known techniques according to the abovePTLs. The data line control circuit includes a read data line drivecircuit 243 and a current drive circuit 35. FIG. 228 specificallyillustrates internal circuits of the differential amplifier AMP3V andthe current drive circuit 35 in FIG. 22A. In FIG. 22A, the read dataline drive circuit 243 includes: a feedback circuit 244 including thedifferential amplifier AMP3V; and an NMOS transistor N1. A data line 3is coupled to an inverting input terminal of the differential amplifierAMP3V, and a power supply line coupled to the read reference signalVREADREF is coupled to a non-inverting input terminal of thedifferential amplifier. In addition, an output terminal of thedifferential amplifier AMP3V is coupled to a gate of the NMOS transistorN1.

When the data line 3 is charged in a read operation, a current drivenode 4 is supplied with a high voltage (for example, VDD) by the currentdrive circuit 35. In addition, the read data line drive circuit 243performs feedback control to quickly and accurately charge the data line3 with the voltage of the read reference signal VREADREF.

In contrast, to output data at high speed, many memory cells MC need tobe read simultaneously in a single read operation. Once read data islatched in data line control circuits corresponding to a plurality ofmemory cells MC, the read data can be outputted sequentially toinput/output terminals DQ via read/write buses RWBS and an I/O circuit107 in accordance with a high-speed clock cycle. However, since readingdata from memory cells MC requires relatively long time, many memorycells MC need to be read simultaneously in a single read operation.

To increase the number of memory cells MC that are simultaneously readin a single read operation, it is necessary to reduce the number of bitlines BL coupled to each multiplexer 7 and arrange more data lines 3 anddata line control circuits at shorter intervals. Namely, the data linecontrol circuits need to be arranged at shorter intervals. However, inthe case of the data line control circuit in FIG. 22 according to therelated techniques, the differential amplifier AMP3V in the feedbackcircuit 244 has a complex circuit configuration and includes manyelements (see FIG. 22B). Thus, there is a problem that it is difficultto arrange many data line control circuits at shorter intervals.

Therefore, to realize a high-speed read operation, data line controlcircuits that can be arranged at short intervals are demanded.

SUMMARY

A semiconductor device according to a first aspect of the presentinvention includes: a resistive memory element; a data line electricallycoupled to the resistive memory element; a control line; a power supplyline; and a control circuit including a first constant current element,a first transistor, and a second transistor. In the control circuit, thefirst transistor has a gate coupled to the data line, one of a sourceand a drain coupled to the first constant current element, and the otherone of the source and the drain coupled to the power supply line. Thesecond transistor has a gate coupled to one of the source and the drainof the first transistor, one of a source and a drain coupled to the dataline, and the other one of the source and the drain coupled to thecontrol line.

A semiconductor device according to a second aspect of the presentinvention includes a resistive memory element, a data line electricallycoupled to the resistive memory element, a control line, a controlcircuit including a feedback circuit coupled to the data line andcontrolling a potential of a second node, a second transistor, and afirst switch element arranged between a first power supply and thecontrol line. The second transistor has a gate coupled to an output nodeof the feedback circuit, one of a source and a drain coupled to the dataline, and the other one of the source and the drain coupled to thecontrol line. In addition, the feedback circuit includes a third switchelement between the second node and the output node of the feedbackcircuit.

A semiconductor device according to a third aspect of the presentinvention includes a plurality of resistive memory cells, a plurality offirst data lines coupled to the resistive memory cells, respectively, aplurality of second data lines, and a voltage generator configured togenerate an internal voltage at an output node. The semiconductor devicefurther comprises a plurality of feedback circuits each coupled to acorresponding one of the first data lines, a corresponding one of thesecond data lines and the output node of the voltage generator, andbeing configured to drive the corresponding one of the second data linesin response to a potential of the corresponding one of the first datalines and the internal voltage.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a control circuit and aperipheral circuit thereof in a semiconductor device according to anexemplary embodiment.

FIG. 2 is a block diagram illustrating a configuration of a data linecontrol circuit in a semiconductor device according to a first exemplaryembodiment.

FIG. 3 is a block diagram illustrating an overall configuration of thesemiconductor device according to the first exemplary embodiment.

FIG. 4 is a circuit diagram illustrating resistive memory cells in thesemiconductor device according to the first exemplary embodiment.

FIG. 5 is a circuit diagram illustrating a part of a data controlcircuit in the semiconductor device according to the first exemplaryembodiment.

FIG. 6 is a circuit diagram illustrating a data line control circuit ina semiconductor device according to a second exemplary embodiment.

FIG. 7 is a circuit diagram illustrating a part of a data controlcircuit in the semiconductor device according to the second exemplaryembodiment.

FIG. 8 is a circuit diagram illustrating a part of the data controlcircuit in the semiconductor device according to the second exemplaryembodiment.

FIG. 9 is a waveform diagram illustrating an operation of thesemiconductor device according to the second exemplary embodiment.

FIG. 10 is a block diagram illustrating an overall configuration of asemiconductor device according to a third exemplary embodiment.

FIG. 11 is a circuit diagram illustrating a data line control circuitand a reference data line control circuit in the semiconductor deviceaccording to the third exemplary embodiment.

FIG. 12 is a waveform diagram illustrating an operation of thesemiconductor device according to the third exemplary embodiment.

FIG. 13 is a diagram for illustrating an operation of the semiconductordevice according to the third exemplary embodiment.

FIG. 14 is a circuit diagram illustrating a data line control circuitand a reference data line control circuit in a semiconductor deviceaccording to a fourth exemplary embodiment.

FIG. 15 is a circuit diagram illustrating a part of a data controlcircuit in the semiconductor device according to the fourth exemplaryembodiment.

FIG. 16 is a waveform diagram illustrating an operation of thesemiconductor device according to the fourth exemplary embodiment.

FIG. 17 is a circuit diagram illustrating a data line control circuitand a reference data line control circuit in a semiconductor deviceaccording to a fifth exemplary embodiment.

FIG. 18 is a circuit diagram illustrating a write circuit in thesemiconductor device according to the fifth exemplary embodiment.

FIG. 19 is a circuit diagram illustrating a reference write circuit inthe semiconductor device according to the fifth exemplary embodiment.

FIG. 20 is a waveform diagram illustrating an operation of thesemiconductor device according to the fifth exemplary embodiment.

FIG. 21 is a circuit diagram illustrating a data line control circuitand a reference data line control circuit in a semiconductor deviceaccording to a sixth exemplary embodiment.

FIGS. 22A and 22B are circuit diagrams of a data line control circuitaccording to related techniques.

PREFERRED MODES

First, outlines of exemplary embodiments of the present invention willbe described. The reference characters in the following outlines of theexemplary embodiments are merely used as examples to facilitateunderstanding of the present invention, not to limit the presentinvention to the illustrated modes.

As illustrated in FIG. 1, a semiconductor device 1 according to anexemplary embodiment includes a resistive memory element 2, a data line3 electrically coupled to the resistive memory element 2, a control line4, a power supply line 5, and a control circuit 6 including a firstconstant current element 11, a first transistor P1, and a secondtransistor N1. In the control circuit 6, the first transistor P1 has agate coupled to the data line 3, one of a source and a drain coupled tothe first constant current element I1, and the other one of the sourceand the drain coupled to the power supply line 5. In addition, thesecond transistor N1 has a gate coupled to one of the source and thedrain of the first transistor P1, one of a source and a drain coupled tothe data line 3, and the other one of the source and the drain coupledto the control line 4.

In this way, the control circuit 6 can be configured simply with thefirst transistor P1, the first constant current element I1, the secondtransistor N1 (namely, the feedback circuit 244 in FIG. 22 can beconfigured simply with the first transistor P1 and the first constantcurrent element I1 alone). Consequently, a plurality of control circuits6 each being configured as described above can be arranged at shorterintervals. Thus, it is possible to provide a semiconductor deviceincluding control circuits that can perform a read operation quickly andaccurately with a simple configuration.

A semiconductor device illustrated in FIG. 2 or 6 further includes avoltage generator 110 illustrated in FIG. 5 supplying a voltage to thepower supply line 5. It is preferable that the voltage generator 110supply a first voltage (V1), which is a sum of a first setting voltage(VREADREF) applied to the data line 3 and an absolute value (|VTP|) of athreshold voltage of the first transistor P1, to the power supply line5.

In the semiconductor device illustrated in FIG. 6, the first constantcurrent element I1 in a control circuit 26 may be configured by a thirdtransistor N2. As illustrated in FIG. 7, a first constant current sourceI3V and a fourth transistor N2V that forms a current mirror circuit withthe third transistor N2 may be arranged outside the control circuit 26.A current flowing through the third transistor N2 may be controlled bythe current mirror circuit on the basis of a current flowing through thefirst constant current source I3V.

In the semiconductor device illustrated in FIG. 6, it is preferable thatthe control circuit 26 include a first switch element P4 between a firstpower supply VDD and the control line 4. The semiconductor device mayperform a first control operation (for example, from timing T1 to T2 inFIG. 9) in which the first switch element P4 is set in a conductivestate and the first voltage (V1) is supplied from the voltage generator110 to the power supply line 5 to charge the data line 3 with the firstsetting voltage (VREADREF).

It is preferable that the semiconductor device illustrated in FIG. 6further include a second constant current element P3 supplying aconstant current to the control line 4. After the first controloperation, the semiconductor device may perform a second controloperation (from timing T2 to T4 in FIG. 9) in which the first switchelement P4 is set in a non-conductive state and the potential of thecontrol line 4 is determined a predetermined time (at timing T3 in FIG.9) after the timing when the first switch element P4 is set in anon-conductive state (at timing T2 in FIG. 9).

As illustrated in FIG. 15, in a semiconductor device illustrated in FIG.14, a voltage generator 114 may be configured to supply the firstvoltage (V1) or a second voltage (V4), which is a sum of a secondsetting voltage (VJUDGEREF) set lower than the first setting voltage(VREADREF) and the absolute value (|VTP|) of the threshold voltage ofthe first transistor P1, to the power supply line 5. After the firstcontrol operation (for example, from timing T1 to T2 in FIG. 16), thesemiconductor device may perform a third control operation (from timingT2 to T4 in FIG. 16) in which the first switch element P4 is set in anon-conductive state, the voltage generator 114 changes the voltagesupplied to the power supply line 5 to the second voltage (V4), and thepotential of the control line 4 is determined a predetermined time (fromtiming T3 to T4 in FIG. 16) after the timing when the first switchelement P4 is set in a non-conductive state (at timing T2 in FIG. 16).

It is preferable that the semiconductor device illustrated in FIG. 14further include a reference resistance element Rref2, a reference dataline 43 coupled to the reference resistance element Rref2, a referencecontrol line 44, and a reference control circuit 86 having substantiallythe same configuration as that of a control circuit 46 and controllingthe reference data line 43 and the reference control line 44, instead ofthe data line 3 and the control line 4. In the first control operation(from timing T1 to T2 in FIG. 16), the reference data line 43 may alsobe charged with the first setting voltage (VREADREF) in the same way asthe data line 3. In addition, in the third control operation (fromtiming T2 to T4 in FIG. 16), the predetermined time may be set on thebasis of change of the potential of the reference control line 44(timing T3 in FIG. 16 is the timing that corresponds to elapse of thepredetermined time).

As illustrated in FIG. 18, a control circuit 56 in a semiconductordevice illustrated in FIG. 17 may further include a write circuit 58including a latch circuit FF2 storing write data and a data line drivecircuit 120 applying a write voltage VDD to the data line 3 on the basisof the write data stored in the latch circuit FF2. The write circuit 58may be coupled to a first node (1 a in FIG. 17) where one of the sourceand the drain of the first transistor P1 is coupled to the gate of thesecond transistor N1. In addition, the write circuit 58 may invert thewrite data stored in the latch circuit FF2 on the basis of change of thepotential of the first node (1 a in FIG. 17) to inactivate the data linedrive circuit 120.

The semiconductor device illustrated in FIG. 17 may perform a fourthcontrol operation (from timing TW41 to TW51 in FIG. 20, for example) inwhich, if the write data stored in the latch circuit (FF2 in FIG. 18) iscompatible with a predetermined write operation (for example, in thecase of a SET write operation as illustrated in FIG. 20, when the writedata is “1,” if the latch circuit (FF2 in FIG. 18) outputs “0,” thewrite data can be considered as being compatible with the predeterminedwrite operation), the data line drive circuit (120 in FIG. 18) appliesthe write voltage VDD to the data line 3 to write the data. In addition,after the fourth control operation, the semiconductor device may performa fifth control operation (from timing TW51 to TW71 in FIG. 20, forexample) in which the application of the write voltage VDD is stoppedand the potential of the control line 4 is determined a predeterminedtime (at timing TW61 in FIG. 20) after the timing when the applicationof the write voltage VDD is stopped.

In the fifth control operation (from timing TW51 to TW71 in FIG. 20, forexample), if change of the potential of the first node (1 a in FIG. 17)is not detected and if the write data stored in the latch circuit (FF2in FIG. 18) is not inverted, the fourth and fifth control operations maybe repeated (from timing TW42 to TW72 and from timing TW43 to TW8 inFIG. 20, for example).

It is preferable that the semiconductor device illustrated in FIG. 17further include a reference resistance element Rref2, a reference dataline 43 coupled to the reference resistance element Rref2, a referencecontrol line 44, and a reference control circuit 96 having substantiallythe same configuration as that of the control circuit 56 and controllingthe reference data line 43 and the reference control line 44, instead ofthe data line 3 and the control line 4. In the fifth control operation(from timing TW51 to TW71 in FIG. 20, for example), the predeterminedtime may be set on the basis of change of the potential of a firstreference node (11 a in FIG. 17) in the reference control circuit 96corresponding to the first node (1 a in FIG. 17) in the control circuit56 (timing TW61 in FIG. 20 is the timing that corresponds to elapse ofthe predetermined time).

A semiconductor device illustrated in FIG. 21 may further include asecond switch element N6 and a first capacitive element C1 having oneend coupled to a reference data line 43 via a second switch element N6.The semiconductor device may be configured to be capable of switchingmodes between a first read operation (for example, a normal measurementmode) performed while the second switch element N6 is in anon-conductive state and a second read operation (for example, aultra-high resistance measurement mode) performed while the secondswitch element N6 is in a conductive state.

A semiconductor device according to another exemplary embodimentillustrated in FIG. 11 includes a resistive memory element 2, a dataline 3 electrically coupled to the resistive memory element 2, a controlline 4, a control circuit 36 including a feedback circuit 34 coupled tothe data line 3 and controlling a potential of a second node 2 a, asecond transistor N1, and a first switch element P4 arranged between afirst power supply VDD and the control line 4. The second transistor N1has a gate coupled to an output node 1 a of the feedback circuit 36, oneof a source and a drain coupled to the data line 3, and the other one ofthe source and the drain coupled to the control line 4. In addition, thefeedback circuit 34 includes a third switch element N3 between thesecond node 2 a and the output node 1 a of the feedback circuit.

The semiconductor device illustrated in FIG. 11 may include a secondcapacitive element C2 having one terminal coupled to the output node 1 aof the feedback circuit 34 and the other terminal supplied with avoltage width control signal VWAVC1 whose amplitude can be controlled.

The semiconductor device illustrated in FIG. 11 may be configured toperform a first control operation (from timing T1 to T2 in FIG. 12) inwhich the first and third switch elements (P4 and N3) are set in aconductive state and the data line 3 is charged with the first settingvoltage (VREADREF) and perform, after the first control operation, asixth control operation (from timing T2 to T4 in FIG. 12) in which thefirst and third switch elements (P4 and N3) are set in a non-conductivestate and the voltage width control signal VWAVC1 is decreased by apredetermined amplitude voltage (ΔVC1 in FIG. 12) to determine thepotential decrease rate of the control line 4.

The semiconductor device illustrated in FIG. 11 may determine thepotential decrease rate of the control line 4 in the sixth controloperation by determining the potential of the control line 4 apredetermined time after the timing when the first and third switchelements (P4 and N3) are set in a non-conductive state (from timing T3to T4 in FIG. 12).

It is preferable that the semiconductor device illustrated in FIG. 11further include a reference resistance element Rref2, a reference dataline 43 coupled to the reference resistance element Rref2, a referencecontrol line 44, and a reference control circuit 76 having substantiallythe same configuration as that of the control circuit 36 and controllingthe reference data line 43 and the reference control line 44, instead ofthe data 3 and the control line 4. In the first control operation (fromtiming T1 to T2 in FIG. 12), the reference data line 43 may also becharged with the first setting voltage (VREADREF) in the same way as thedata line 3. In addition, in the sixth control operation (from timing T2to T4 in FIG. 12), the predetermined time may be set on the basis ofdecrease of the potential of the reference control line 44 (timing T3 inFIG. 12 is the timing that corresponds to elapse of the predeterminedtime).

It is preferable that the feedback circuit 34 of the semiconductordevice illustrated in FIG. 11 further include a first constant currentelement N2 and a first transistor P1 having a gate coupled to the dataline 3, one of a source and a drain coupled to the first constantcurrent element N2, and the other one of the source and the draincoupled to the power supply line 5.

It is preferable that the semiconductor device illustrated in FIG. 11further include a voltage generator 112 supplying a voltage to the powersupply line 5. In addition, it is preferable that, as illustrated inFIG. 5, the voltage generator 110 supply a first voltage (V1), which isa sum of a first setting voltage (VREADREF) applied to the data line 3and an absolute value (|VTP|) of a threshold voltage of the firsttransistor P1V, to the power supply line 5.

In the semiconductor device illustrated in FIG. 11, it is preferablethat the first constant current element in the control circuit 36 isconfigured by a third transistor N2. In addition, it is preferable that,as illustrated in FIG. 7, a first constant current source I3V and afourth transistor N2V that forms a current mirror circuit with the thirdtransistor N2 be arranged outside the control circuit 36. In addition,it is preferable that a current flowing through the third transistor N2be controlled by the current mirror circuit on the basis of a currentflowing through the first constant current source I3V.

Next, exemplary embodiments of the present disclosure will be describedin detail with reference to the drawings.

First Exemplary Embodiment

A configuration according to a first exemplary embodiment will bedescribed with reference to FIGS. 2 to 5. FIG. 3 is a block diagramillustrating an overall configuration of a semiconductor device 101. Asillustrated in FIG. 3, a memory array 8 includes a plurality of bitlines BL, a plurality of word lines WL, and a plurality of multiplexers(MUX) 7. Each multiplexer 7 is coupled to a plurality of bit lines BLand has a function of selecting a single bit line BL and electricallycoupling the selected single bit line BL to a corresponding data line 3on the basis of a corresponding multiplexer address BA. A plurality ofrow decoders 106 and a plurality of BA decoders 105 are arranged along afirst side (on the left side in FIG. 3) of the memory array 8. Each rowdecoder 106 selectively activates a single word line WL on the basis ofan inputted row address ADD_row. The plurality of BA decoders 105selectively activate multiplexer addresses BA on the basis of aninputted column address ADD_col. A plurality of data line controlcircuits 6 are aligned for the respective data lines 3 along a secondside (on the upper side in FIG. 3) perpendicular to the first side ofthe memory array 8.

While a plurality of multiplexers 7 are coupled to a single data line 3,a single multiplexer 7 is selectively activated in a read/writeoperation. As a result, a single bit line BL is electrically coupled tothe corresponding data line 3. Since the data lines 3 extend a longdistance as illustrated in FIG. 3, the data lines 3 have large parasiticcapacitance.

FIG. 4 is a circuit diagram illustrating a part of the memory array 8 inFIG. 3. A memory cell MC is arranged at each intersection of a bit lineBL and a word line WL. Each memory cell MC is configured by a seriesconnection of a resistive memory element 2 and a cell transistor 9having one end coupled to a source plate SP. In a read operation, thesource plate SP is supplied with VSS and the data line 3 is suppliedwith a voltage of a read reference signal VREADREF, which is a bit lineread setting voltage. In this way, the voltage of the read referencesignal VREADREF is applied across the resistive memory element 2 of thememory cell MC located at the intersection of a selected word line WLand a selected bit line BL.

Next, FIG. 2 is a block diagram illustrating a configuration of a dataline control circuit 6 in the semiconductor device 101 according to thefirst exemplary embodiment. As illustrated in FIG. 2, the data linecontrol circuit 6 includes; a data input/output circuit 11inputting/outputting data from/to an I/O circuit (107 in FIG. 3) via aread/write bus RWBS: a write circuit 18 driving a corresponding dataline 3 with a write voltage in a write operation, and a read circuit 10.The read circuit 10 includes a read data line drive circuit 13, acurrent drive circuit 15, and a read determination circuit 12. Thecurrent drive circuit 15 is coupled to a current drive node 4 and has afunction of driving a current that flows through the current drive node4. The read determination circuit 12 has a function of determining aresistance state of a memory cell MC in the memory array 8 on the basisof change of the voltage of the current drive node 4 and outputting theread data obtained by the determination to the data input/output circuit11.

The read data line drive circuit 13 has the same configuration as thatof the control circuit 6 in FIG. 1 referred to in the above descriptionof the outlines of the exemplary embodiments. Namely, the read data linedrive circuit 13 includes a feedback circuit 14 and an NMOS transistorN1. The feedback circuit 14 includes a PMOS transistor P1 and a constantcurrent element I1. The constant current element I1 is an element forflowing a current having a current value i1. For example, the constantcurrent element I1 can be configured by a resistor or a MOS transistor(configured by an NMOS transistor N2 in a second exemplary embodimentdescribed below).

The feedback circuit 14 can be realized with a simpler configurationthan that of the feedback circuit 244 according to the relatedtechniques illustrated in FIGS. 22A and 22B. An operation principle ofthe feedback circuit 14 will be described below.

As illustrated in FIG. 2, the PMOS transistor P1, the constant currentelement I1, and the NMOS transistor N1 are coupled to each other asfollows. The PMOS transistor P1 has a source coupled to a feedbackcircuit power supply line 5, a drain coupled to the constant currentelement I1, and a gate coupled to a corresponding data line 3. Inaddition, the NMOS transistor N1 has a drain coupled to the currentdrive node 4, a source coupled to the data line 3, and a gate (node 1 a)coupled to a coupling node of the drain of the PMOS transistor and theconstant current element I1.

Next, FIG. 5 is a circuit diagram illustrating a configuration of afeedback circuit voltage generator 110. The feedback circuit voltagegenerator 110 in FIG. 5 is a circuit included in a data control circuit17 in FIG. 2. The feedback circuit voltage generator 110 has a functionof inputting the read reference signal VREADREF and a control signal ENBand outputting a feedback circuit voltage VFB.

As illustrated in FIG. 5, the feedback circuit voltage generator 110uses a PMOS transistor P1V and a constant current source I2V to generatea potential of a node 3 a. The constant current source I2V is a constantcurrent source that flows the same current it as does the constantcurrent element I1. The PMOS transistor P1V is a transistor having thesame channel length and channel width as those of the PMOS transistorP1. It is desirable that these PMOS transistors (P1 and P1V) be formedin the same process. By using the same process, the accuracy in matchingthe channel length and the channel width of the two PMOS transistors (P1and P1V) can be improved, and the two PMOS transistors can have the samecurrent drive capability.

The current value i1 is set to flow when a gate-source voltage VGS ofthe PMOS transistors (P1 and P1V) reaches a threshold voltage VTP. Inthis way, when the gate-source voltage VGS of the PMOS transistor P1Vreaches the threshold voltage VTP, the potential of the node 3 a reachesVREADREF+|VTP| (=V1). |VTP| represents an absolute value of thethreshold voltage VTP. Namely, the potential of the node 3 a is a sum ofthe read reference signal VREADREF and the absolute value |VTP| of thethreshold voltage of the PMOS transistor P1.

A regulator circuit 41 in FIG. 5 includes a differential amplifierAMP1V, PMOS transistors (P8V and P9V), NMOS transistors (N4V and N5V),and an inverter circuit INV1V. When the control signal ENB is at a lowlevel, the PMOS transistor P9V and the NMOS transistor N5V are turnedoff and the NMOS transistor N4V is turned on. In this state, theregulator circuit 41 is activated. With the differential amplifier AMP1Vand the PMOS transistor P8V, the regulator circuit 41 outputs thevoltage (VREADREF+|VTP|) of the node 3 a to the feedback circuit voltageVFB with a large drive capability. In contrast, when the control signalENB is at a high level, the regulator circuit 41 is inactivated. In thisstate, the regulator circuit 41 outputs VSS to the feedback circuitvoltage supply VFB.

Next, an operation of charging the data line 3 performed in a readoperation will be described with reference to FIG. 2. The principle ofthis charging operation is common to all the first to sixth exemplaryembodiments.

As illustrated in FIG. 2, the current drive node 4 is supplied with ahigh voltage (for example, VDD) from the current drive circuit 15. Whenthe control signal ENB is at a low level, the source of the PMOStransistor P1 is supplied with the voltage of VREADREF+|VTP|. Since thePMOS transistor P1 has a gate coupled to the data line 3, if the voltageof the data line 3 is lower than VREADREF, |VGS| (the absolute value ofthe gate-source voltage) of the PMOS transistor P1 is larger than |VTP|.Namely, the PMOS transistor P1 is strongly turned on. Accordingly, thevoltage of the node 1 a is increased to a high level and the NMOStransistor N1 is strongly turned on. As a result, the data line 3 ischarged at high speed. When the voltage of the data line 3 reachesVREADREF as the charging progresses, |VGS| of the PMOS transistor P1reaches |VTP|. In this state, since the current capability of the PMOStransistor P1 has the current value i1, which is the same as that of theconstant current element I1, a steady state in which the potential ofthe node 1 a does not change is reached. The potential of the node 1 ain this state is a voltage V2 (V2=VREADREF+VTN), which is a sum of thevoltage VREADREF of the data line 3 and a threshold voltage VTN of theNMOS transistor N1. In this way, when the voltage of the data line 3reaches VREADREF, a steady state is reached and the charging operationis completed.

As described above, the read data line drive circuit 13 in FIG. 2performs a feedback operation by causing the feedback circuit 14 toreceive the voltage of the data line 3 and controlling the potential ofthe node 1 a so that the data line 3 is charged until the voltage of thedata line 3 reaches VREADREF. In this charging operation, when thevoltage of the data line 3 reaches VREADREF, a steady state is obtained.Thus, an overshoot is not caused in the data line 3.

As described above, according to the first exemplary embodiment, thefollowing advantageous effects can be obtained. In the same way as theread data line drive circuit 243 according to the related techniquesillustrated in FIGS. 22A and 22B, each read data line drive circuit 13according to the first exemplary embodiment can perform feedback controland can charge a corresponding data line 3 quickly and accurately up tothe voltage of the reference signal VREADREF. In addition, since eachfeedback circuit 14 can be configured as a circuit with a simpleconfiguration, a plurality of data line control circuits 6 can bearranged at shorter intervals. As a result, the number of memory cellsMC to be read simultaneously in a single cell read operation can beincreased, and high-speed data output can be realized.

Second Exemplary Embodiment Configuration According to Second ExemplaryEmbodiment

Next, a configuration according to a second exemplary embodiment will bedescribed with reference to FIGS. 6 to 8. The second exemplaryembodiment differs from the first exemplary embodiment in that theconstant current element I1 according to the first exemplary embodimentis replaced with an NMOS transistor N2, that a constant current mirrorsource circuit 51 and a VINREF generator 52 in FIG. 7 are newly added ina data control circuit 27, and that a feedback circuit voltage generator112 is coupled to the constant current mirror source circuit 51. Inaddition, FIG. 6 according to the second exemplary embodimentillustrates specific circuit examples of the data input/output circuit11, the read determination circuit 12, and the current drive circuit 15.In the second exemplary embodiment, constituent elements havingsubstantially the same functions as those according to the firstexemplary embodiment are denoted by the like reference characters, andredundant description thereof will be omitted.

As illustrated in FIG. 6, the NMOS transistor N2 is used in place of theconstant current element I1 according to the first exemplary embodiment.The NMOS transistor N2 has a gate supplied with a reference voltageVINREF outputted from the data control circuit 27. Next, the datacontrol circuit 27 will be described in detail with reference to FIG. 7.The data control circuit 27 includes the constant current mirror sourcecircuit 51, the VINREF generator 52, and the feedback circuit voltagegenerator 112. A reference character “Ei” in FIG. 6 represents controlsignals outputted from the data control circuit 27. For example, thecontrol signals Ei include the reference voltage VINREF in FIG. 7. Theconstant current mirror source circuit 51 includes a constant currentsource I3V having the current value i1 and a PMOS transistor P10V thatare coupled in series with each other between the power supply VDD) andthe ground VSS. The PMOS transistor P10V has a gate and a drain coupledto each other, and the current i1 flows through the PMOS transistorP10V.

The VINREF generator 52 in FIG. 7 includes a PMOS transistor P12V and anNMOS transistor N2V that are coupled in series with each other betweenthe power supply VDD and the ground VSS. In addition, the PMOStransistor P12V has a gate coupled to the gate of the PMOS transistorP10V. These two PMOS transistors (P10V and P12V) form a current mirrorcircuit. The two PMOS transistors (P10V and P12V) have the same channellength and channel width. With this current mirror circuitconfiguration, the current i1 also flows through the PMOS transistor P12and the NMOS transistor N2V.

In addition, the NMOS transistor N2V has a gate and a drain that arecoupled to each other, and from this coupling node, the VINREF generator52 outputs the reference voltage VINREF. An interconnect of thereference voltage VINREF is coupled to the gate of an NMOS transistor N2in each data line control circuit 26. In this way, the NMOS transistorN2V in the VINREF generator 52 forms a current mirror circuit with anNMOS transistor N2 in each data line control circuit 26. The NMOStransistor N2V and each MOS transistor N2 have the same channel lengthand channel width. It is desirable that these NMOS transistors (N2V andN2) be formed in the same process. By using the same process, theaccuracy in matching the channel length and the channel width of the twoNMOS transistors (N2 and N2V) can be improved, and the two NMOStransistors can have the same current drive capability. With the abovecurrent mirror circuit configuration, the current i1 also flows throughan NMOS transistor N2 in each data line control circuit 26.

Next, the feedback circuit voltage generator 112 in FIG. 7 includes aPMOS transistor P11V in place of the constant current source I2V in thefeedback circuit voltage generator 110 (the first exemplary embodiment)in FIG. 5. The PMOS transistor P11V has a gate coupled to the gate ofthe PMOS transistor P10V in the constant current mirror source circuit51. These two PMOS transistors (P10V and P11V) form a current mirrorcircuit. The two PMOS transistors (P10V and P11V) are formed to have thesame channel length and channel width. With this current mirror circuitconfiguration, the current i1 also flows through the PMOS transistorP11V. In this way, the potential of the node 3 a is set to beVREADREF+|VTP|.

Next, the current drive circuit 15 in FIG. 6 will be described. Thecurrent drive circuit 15 includes a PMOS transistor P3 having a gatecoupled to a reference voltage VIPREF (see FIG. 8), which will bedescribed in detail below, and a PMOS transistor P4 having a gatecoupled to a control signal PRB. The reference voltage VIPREF and thecontrol signal PRB are some of the data control signals Ei outputtedfrom the data control circuit 27. The PMOS transistor P4 supplies thevoltage VDD to the current drive node 4 with a large drive capabilitywhile the control signal PRB is at a low level.

In contrast, the reference voltage VIPREF is generated by a VIPREFgenerator 63 arranged in the data control circuit 27 in FIG. 8. Asillustrated in FIG. 8, the VIPREF generator 63 includes a differentialamplifier AMP2V, a PMOS transistor P3V, an NMOS transistor N6V, and areference resistor Rref1. The PMOS transistor P3V, the NMOS transistorN6V, and the reference resistor Rref1 are coupled in series with eachother between the voltage supply VDD and the ground VSS. A node 5 a,which is a coupling node of the NMOS transistor N6V and the referenceresistor Rref1, is coupled to an inverting input terminal of thedifferential amplifier AMP2V. In addition, a non-inverting inputterminal of the differential amplifier AMP2V is supplied with thevoltage of the read reference signal VREADREF. In addition, an outputterminal of the differential amplifier AMP2V is coupled to a gate of theNMOS transistor N6V. With this configuration, the potential of the node5 a is controlled to be equal to the potential of the read referencesignal VREADREF. In this way, a current iR represented by formula (1)flows through the reference resistor Rref1.iR=VREADREF/Rref1  formula (1)

The current iR represented by formula (1) also flows through the PMOStransistor P3V. The PMOS transistor P3V has a gate and a drain coupledto each other, and from this coupling node, the VIPREF generator 63outputs the reference voltage VIPREF. An interconnect of the referencevoltage VIPREF is coupled to the gate of a PMOS transistor P3 in eachdata line control circuit 26. The PMOS transistor P3V in the VIPREFgenerator 63 forms a current mirror circuit with a PMOS transistor P3 ineach data line control circuit 26. The PMOS transistor P3V and the PMOStransistor P3 are configured to have the same channel length and channelwidth. It is desirable that the PMOS transistors (P3V and P3) be formedin the same process. By using the same process, the accuracy in matchingthe channel length and the channel width of the two PMOS transistors(P3V and P3) can be improved, and the two PMOS transistors can have thesame current drive capability. Thus, both the PMOS transistor P3V andthe PMOS transistor P3 have a function of flowing the current iR. Withthis current mirror circuit configuration, the current iR also flowsthrough the PMOS transistor P3. Thus, the current flowing through thecurrent drive node 4 is a sum of the current flowing via the PMOStransistor P4 and the current iR flowing via the PMOS transistor P3.

Next, the read determination circuit 12 in FIG. 6 will be described. Asillustrated in FIG. 6, the read determination circuit 12 includes a PMOStransistor P5 having a gate coupled to the current drive node 4 and aPMOS transistor P6 having a gate coupled to a control signal RJB, thePMOS transistors P5 and P6 being coupled in series with each other. Thecontrol signal RJB is one of the data control signals Ei. When the PMOStransistor P5 and the PMOS transistor P6 are set in a conductive state,the power supply VDD is applied to a node 10 a (read node).

With this configuration, the read determination circuit 12 operates asfollows. When the control signal RJB is at a low level, if the currentdrive node 4 is lower than VDD−|VTP|, the PMOS transistor P5 is turnedon and outputs VDD to the node 10 a. In contrast, when the controlsignal RJB is at a low level, if the current drive node 4 is higher thanVDD−|VTP|, the PMOS transistor P5 is turned off. Thus, no voltage isoutputted to the node 10 a.

Next, the data input/output circuit 11 in FIG. 6 will be described. Asillustrated in FIG. 6, the data input/output circuit 11 includes a latchcircuit FF1 latching read data and write data and a PMOS transistor P7having a gate coupled to the control signal PRB. The latch circuit FF1has one terminal coupled to a drain of the PMOS transistor P7 and theother terminal coupled to the node 10 a (read node). In addition, thePMOS transistor P7 has a source coupled to the power supply VDD. Thedata input/output circuit 11 has a function of inputting/outputtingwrite/read data from/to the read/write bus RWBS (not illustrated in FIG.6).

Operation According to Second Exemplary Embodiment

Next, an operation according to the second exemplary embodiment will bedescribed with reference to FIG. 9. FIG. 9 is a waveform diagramillustrating a read operation of the semiconductor device according tothe second exemplary embodiment. In the upper portion in FIG. 9, thevoltages of the control signals ENB, PRB, and RJB are illustrated. Inthe middle portion in FIG. 9, the voltages of the data line 3, thecurrent drive node 4, the node 1 a, and the feedback circuit powersupply VFB are illustrated. In addition, the voltages of the data line3, the current drive node 4, and the node 1 a are denoted by solid lineswhen a corresponding resistive memory element 2 is in a high resistancestate. However, these voltages are denoted by dashed lines when acorresponding resistive memory element 2 is in a low resistance state.In the lower portion in FIG. 9, the voltage of the node 10 a (read node)is illustrated. The voltage of the node 10 a is also denoted by a solidline and a dashed line when a corresponding resistive memory element 2is in a high resistance state and a low resistance state, respectively.

In FIG. 9, the period from timing T1 to T5 is a read operation period.In this period, a word line and a multiplexer address BA correspondingto a data-read-target memory cell MC are activated.

The period from timing T1 to T2 in FIG. 9 is a charging period of a dataline 3. In this charging period of the data line 3, a selected bit lineBL coupled to the read-target memory cell MC is also charged. Since theoperation of charging the data line 3 has already been described in thefirst exemplary embodiment, redundant description will be omitted.

From timing T1 to T2, the control signal ENB is set to a low level toactivate the feedback circuit voltage generator 112 and output thevoltage VFB as the voltage V1 (=VREADREF+|VTP|). In addition, thecontrol signal PRB is set to a low level to turn on the PMOS transistorP4 and drive the current drive node 4 with the voltage VDD. In theperiod from timing T1 to T2 in FIG. 9, while the voltage of the dataline 3 is lower than VREADREF, since the PMOS transistor P1 is stronglyturned on, the voltage of the node 1 a reaches close to the sourcevoltage of the PMOS transistor P1 (namely, close to the voltage V1 ofthe feedback circuit power supply). However, as the charging progressesand the voltage of the data line 3 is increased, the voltage of the node1 a is gradually decreased. When the data line 3 is charged andincreased up to the voltage VREADREF, the node 1 a is brought in asteady state at the voltage V2. In addition, since the data line 3 islittle affected by the resistance value of the resistive memory element2, the data line 3 is maintained at the voltage VREADREF.

Since the control signal PRB is changed to a low level at timing T1, thePMOS transistor P7 is turned on and the latch circuit FF1 is reset. As aresult, the node 10 a (read node) is initialized to a low level.

Next, the period from timing T2 to T3 is a wait period. In this period,since the control signal ENB is maintained at a low level, the feedbackcircuit voltage generator 112 is still active and the feedback circuit24 continues to perform a feedback operation. Without this feedbackoperation, the voltage of the data line 3 would be decreased fromVREADREF by the charges that have flowed to the memory cell MC. However,with the feedback operation, the charges that have flowed to the memorycell MC are supplemented from the current drive node 4 and the data line3 is maintained at the voltage VREADREF.

In addition, in this period, since the control signal PRB is set to ahigh level to turn off the PMOS transistor P4 in the current drivecircuit 15. Namely, the current supplied to the current drive node 4 isonly the current iR that flows via the PMOS transistor P3. Thus, if acurrent iMC flowing through the memory cell MC is larger than thecurrent value iR (iMC>iR), the charges of the current drive node 4 aredecreased. Since the current drive node 4 has parasitic capacitancesmaller than that of the data line 3, if the charges of the currentdrive node 4 are decreased, the voltage of the current drive node 4 isquickly decreased. The above condition iMC>iR is satisfied when theresistance value of the resistive memory element 2 is smaller than thatof the reference resistor Rref1 (namely, when the resistive memoryelement 2 is in a low resistance state). As illustrated in the periodfrom timing T2 to T3 in FIG. 9, the voltage (dashed line) of the currentdrive node 4 is quickly decreased close to the voltage VREADREF fromtiming T2. In addition, in the period from timing T2 to T3, the voltage(dashed line) of the node 1 a is increased from the voltage V2 in thesteady state, to strongly turn on the NMOS transistor N1 and supplycharges to the data line 3 from the current drive node 4.

In contrast, if the current iMC flowing through the memory cell MC issmaller than the current value iR (iMC<iR), since the number of chargesflowing to the memory cell MC is small, it is only sufficient to supplya smaller number of charges from the current drive node 4. Thus, thecurrent drive node 4 is maintained at a high voltage. The abovecondition iMC<iR is satisfied when the resistance value of the resistivememory element 2 is larger than that of the reference resistor Rref1(namely, when the resistive memory element 2 is in a high resistancestate). As illustrated in the period from timing T2 to T3 in FIG. 9, thecurrent drive node 4 (solid line) is maintained at a high voltage. Inaddition, in the period from timing T2 to T3, the voltage (solid line)of the node 1 a is maintained at the voltage V2 in the steady state.

As described above, in the second exemplary embodiment, the voltage ofthe current drive node 4 changes depending on whether the current iMCflowing through the memory cell MC is larger or smaller than iR (namely,whether the resistance value of the resistive memory element 2 is largeror smaller than that of the reference resistor Rref1).

Next, the period from timing T3 to T4 is a determination period. In thisperiod, the control signal RJB is set to a low level in one shot. Inthis period, the resistance state of the resistive memory element 2 isdetermined by the read determination circuit 12. If the resistive memoryelement 2 is in a low resistance state, the node 10 a (read node)changes from a low level to a high level (dashed line) and data islatched in the latch circuit FF1. In contrast, if the resistive memoryelement 2 is in a high resistance state, the node 10 a (read node)remains at a low level (solid line) and the output from the latchcircuit FF1 does not change.

At timing T4, the control signal ENB is set to a high level(inactivated) to inactivate the feedback circuit voltage generator 112and set the feedback circuit power supply VFB to VSS. Next, at timingT5, the data line 3 is reset to VSS by the write circuit (18 in FIG. 6)and the like. In this way, the read operation is completed.

As described above, the second exemplary embodiment provides the sameadvantageous effects as those provided by the first exemplaryembodiment. In the same way as the read data line drive circuit 243according to the related techniques illustrated in FIGS. 22A and 22B,each read data line drive circuit 23 can perform feedback control andcan charge a corresponding data line 3 quickly and accurately up to thevoltage of the reference signal VREADREF. In addition, according to thesecond exemplary embodiment, since each feedback circuit 24 can beconfigured as a circuit with a simple configuration, a plurality of dataline control circuits 26 can be arranged at shorter intervals. As aresult, the number of memory cells MC to be read simultaneously in asingle cell read operation can be increased, and high-speed data outputcan be realized.

In addition, according to the second exemplary embodiment, the currentflowing through the feedback circuit voltage generator 112 and theVINREF generator 52 is controlled by the current mirror circuit, usingthe current i1 of the constant current source I3V. Thus, when a steadystate is reached in the charging period of a data line 3, since thevalue of the current flowing through the PMOS transistor P1 and the NMOStransistor N2 reaches i1 generated by the single constant current sourceI3V, the charged voltage of the data line 3 can accurately match theread reference signal VREADREF. Namely, the accuracy of the voltage withwhich the data line 3 is charged can be increased.

In addition, according to the second exemplary embodiment, by changingthe voltage of a current drive node 4 on the basis of the currentflowing through a corresponding data line 3 in the wait period and bydetecting change of the voltage of the current drive node 4 in thedetermination period, the resistance state of a corresponding resistivememory element 2 coupled to the data line 3 can be detected with acircuit having a simple configuration. Namely, according to the secondexemplary embodiment, not only each data line 3 can be charged quicklyand accurately, but also the resistance state of each resistive memoryelement 2 can be read with a circuit having a simple configuration.

Third Exemplary Embodiment Configuration According to Third ExemplaryEmbodiment

Next, a configuration according to a third exemplary embodiment will bedescribed with reference to FIGS. 10 and 11. FIG. 10 is a block diagramillustrating an overall configuration of a semiconductor device 301according to the third exemplary embodiment. When FIG. 10 is comparedwith FIG. 3, it becomes clear that a reference data line 43, a referencedata line control circuit 76, a reference resistor Rref2, and a one-shotcircuit 48 are newly added in FIG. 10. Of the constituent elements otherthan these elements, those having substantially the same functions asthose according to the first or second exemplary embodiment are denotedby the like reference characters, and redundant description will beomitted.

The reference data line 43 has substantially the same length as that ofeach data line 3 and is coupled to dummy multiplexers (dummy MUX) 57corresponding to the multiplexers (MUX) 7 coupled to each data line 3.In this way, the interconnect capacitance of the reference data line 43is set to be equal to that of each data line 3.

Next, a data line control circuit 36 and the reference data line controlcircuit 76 according to the third exemplary embodiment will be describedin detail with reference to FIG. 11. FIG. 11 is a circuit diagramillustrating the data line control circuit 36 and the reference dataline control circuit 76 in the semiconductor device 301 according to thethird exemplary embodiment. When the data line control circuit 36 inFIG. 11 is compared with the data line control circuit 26 in FIG. 6, itbecomes clear that a feedback circuit 34 in the data line controlcircuit 36 and a current drive circuit 35 have a differentconfiguration.

First, the feedback circuit 34 newly includes an NMOS transistor N3between a node 2 a, which is a coupling node of the drain of the PMOStransistor P1 and the drain of the NMOS transistor N2, and the gate(node 1 a) of the NMOS transistor N1. In addition, the feedback circuit34 newly includes a second capacitive element C2 having one terminalcoupled to the node 1 a. A control signal WAB is supplied to a gate ofthe NMOS transistor N3. In addition, the second capacitive element C2has the other terminal supplied with a control signal VWAVC1 (voltagewidth control signal).

In addition, the current drive circuit 35 in FIG. 11 does not includethe PMOS transistor P3 in FIG. 6 but is configured by the PMOStransistor P4 alone.

In FIG. 11, the reference data line control circuit 76 includes circuitblocks each having the same configuration as that of the circuit blocksin the data line control circuit 36. More specifically, a reference readdata line drive circuit 73, a current drive circuit 75, a reference readdetermination circuit 72, and a data input/output circuit 71 in thereference data line control circuit 76 have the same configurations asthose of a read data line drive circuit 33, the current drive circuit35, the read determination circuit 12, and the data input/output circuit11 in the data line control circuit 36, respectively. The circuitelements included in the reference data line control circuit 76 aredenoted by the same reference characters of the respective circuitelement in the data line control circuit 36.

The reference data line control circuit 76 differs from each data linecontrol circuit 36 in that a PMOS transistor P6 in the reference readdetermination circuit 72 has a gate coupled to VSS and that a datacontrol signal coupled to a write circuit 78 is fixed at VSS so thatwriting of the reference data line 43 is not performed. Since only thedifference between the reference data line control circuit 76 and eachdata line control circuit 36 is an input signal, the reference data linecontrol circuit 76 can be arranged in approximately the same way as eachdata line control circuit 36. Thus, it is preferable that a singlereference data line control circuit 76 be arranged next to the aligneddata line control circuits 36.

In addition, the reference resistor Rref2 is coupled between thereference data line 43 and the ground VSS. When the reference data line43 is at the voltage VREADREF, the current iR flows through thereference resistor Rref2.

The one-shot circuit 48 has a function of generating a one-shot signalin a determination period (in the period from timing T3 to T4 in FIG.12), which will be described in detail below. When a node 20 a(reference read node) is changed from a low level to a high level, inresponse to a rising edge thereof, the one-shot circuit 48 outputs aone-shot low signal as the control signal RJB. The control signal RJB issupplied to the gate of the PMOS transistor P6 in the read determinationcircuit 12 in each data line control circuit 36 and to a data controlcircuit 37. The data control circuit 37 according to the third exemplaryembodiment includes the feedback circuit voltage generator 112 accordingto the second exemplary embodiment in FIG. 6.

Operation According to Third Exemplary Embodiment

Next, an operation according to the third exemplary embodiment will bedescribed with reference to FIGS. 12 and 13. FIG. 12 is a waveformdiagram illustrating a read operation of the semiconductor device 301according to the third exemplary embodiment. In the upper portion inFIG. 12, the voltages of the control signals ENB, PRB, WAB, and VWAVC1are illustrated. In the middle portion in FIG. 12, the voltages of thedata line 3, the reference data line 43, the current drive node 4, areference current drive node 44, the node 1 a, the node 2 a, a node 11a, a node 12 a, and the feedback circuit power supply VFB areillustrated. In addition, in the lower portion in FIG. 12, the voltageof the node 20 a (reference read node) and the node 10 a (read node) areillustrated. Among these waveforms, those corresponding to a memory cellin a high resistance state are denoted by solid lines, thosecorresponding to a memory cell in a low resistance state are denoted bydashed lines, and those relating to the reference control circuit aredenoted by dotted lines.

As in the second exemplary embodiment, a word line WL and a multiplexeraddress BA corresponding to a data-read-target memory cell MC are activein the period from timing T1 to T5 in FIG. 12.

The period from timing T1 to T2 is a charging period of the data line 3.In this period, since the control signal WAB is at a high level and theNMOS transistor N3 is set in a conductive state, the same chargingoperation as that according to the second exemplary embodiment isperformed. In addition, in the third exemplary embodiment, the referencedata line 43 is also charged with the same voltage VREADREF as is thedata line 3. In addition, at timing T1, since the control signal ENB ischanged from a high level to a low level, the PMOS transistor P7 isturned on and the latch circuit FF1 is reset. In this way, the node 10 a(read node) and the node 20 a (reference read node) are initialized to alow level.

Next, at timing T2, since the control signal WAB is set to a low leveland the NMOS transistor N3 is set in a non-conductive state, the node 1a and the node 2 a are electrically separated from each other and thenode 11 a and the node 12 a are electrically separated from each other.As a result, the node 1 a and the node 11 a are set in a floating state.At timing T2, the node 1 a and the node 11 a are maintained at thevoltage V2 (=VREADREF+VTN) which corresponds to a steady state in thischarging operation. Immediately after timing T2, the control signalVWAVC1 is decreased by an amplitude voltage ΔVC1. As a result, becauseof coupling of the second capacitive element C2, the voltage of the node1 a and the node 11 a is decreased from the voltage V2 by ΔVC2. Theamplitude voltage ΔVC2 is a voltage determined by the parasiticcapacitance of the node 1 a, the capacitance value of the secondcapacitive element C2, and the amplitude ΔVC1 of the control signalVWAVC1.

By setting the control signal ENB to a high level at timing T2, theregulator circuit 41 in the feedback circuit voltage generator 112 isinactivated and the feedback circuit power voltage VFB is decreased fromthe voltage V1 to VSS. In the second exemplary embodiment, the feedbackcircuit voltage generator 112 is maintained active and VFB is maintainedat VREADREF in the wait period (T2 to T3). However, the third exemplaryembodiment differs from the second exemplary embodiment in that VFB isdecreased to VSS. Since the voltage of the feedback circuit power supplyVFB is decreased to VSS, the node 2 a and the node 12 a are decreasedfrom the voltage V2 to VSS by the current through the NMOS transistorN2. In addition, in the period from timing T2 to T3, the control signalPRB is set to a high level to stop the current supply via the currentdrive circuit 35. Immediately after timing T2, the current drive node 4and the reference current drive node 44 are maintained at voltages closeto VDD by the parasitic capacitance of the nodes.

The period from timing T2 to T3 is a wait period. In this period, sincecharges accumulated by large parasitic capacitance of the reference dataline 43 (larger than parasitic capacitance of the reference currentdrive node 44) are decreased by the current flowing through thereference resistor Rref2, the voltage of the reference data line 43 isgradually decreased (see the reference data line 43 represented by adotted line in the period from T2 to T3 in FIG. 12). Likewise, chargesaccumulated by large parasitic capacitance of the data line 3 (largerthan parasitic capacitance of the current drive node 4) are alsogradually decreased by the current that flows on the basis of theresistance state of a corresponding resistive memory element 2 (see thedata line 3 represented by a solid line and a dashed line in the periodfrom T2 to T3 in FIG. 12).

In the period from timing T2 to T3, the gate-source voltage VGS of theNMOS transistor N1 is small and operates within a range of sub-thresholdleak characteristics. FIG. 13 illustrates sub-threshold characteristicsof the NMOS transistor N1. In FIG. 13, the horizontal axis representsthe gate-source voltage VGS and the vertical axis represents asub-threshold leakage current on a logarithmic scale. The current valuechanges by one digit between two adjacent graduations on the verticalaxis. Until immediately before timing T2, the NMOS transistor N1 in thereference data line control circuit 76 operates at an operation point Ain FIG. 13. At the operation point A, since the source and the gate ofthe NMOS transistor N1 are at the voltage VREADREF and the voltageVREADREF+VTN (=V2), respectively, the gate-source voltage VGS is at VTN.Thus, the current iR illustrated in FIG. 13 flows.

Immediately after timing T2, since the gate of the NMOS transistor N1 isdecreased by the amplitude voltage ΔVC2, the gate-source voltage VGSreaches VGSB=VTN−ΔVC2. Thus, the NMOS transistor N1 operates at anoperation point B in FIG. 13. Namely, the current value is decreased toa current value iB, which is significantly smaller than the currentvalue iR. In FIG. 13, the current value iB is smaller than the currentvalue iR by two digits. From immediately after timing T2, when the NMOStransistor N1 starts operating at the operation point B, the voltageheld by the parasitic capacitance of the reference current drive node 44is decreased by the current value iB.

Thereafter, the voltage of the reference data line 43 is graduallydecreased. However, since the gate-source voltage VGS of the NMOStransistor N1 is increased to be larger than VGSB by the decreasedvoltage, the current that the NMOS transistor N1 flows from thereference current drive node 44 is gradually increased to be larger thanthe current value iB. As a result, the voltage decrease rate of thereference current drive node 44 is gradually increased. This increase ofthe current value depends on the voltage decrease rate of the referencedata line 43, namely, on the resistance value of the reference resistorRref2.

Likewise, the voltage of a current drive node 4 in each data linecontrol circuit 36 is also decreased depending on the resistance valueof a resistive memory element 2 coupled to a corresponding data line 3.If the resistive memory element 2 has a high resistance value, thevoltage of the current drive node 4 is decreased gradually (see a solidline representing the current drive node 4 in the period from timing T2to T3 in FIG. 12). If the resistive memory element 2 has a lowresistance value, the voltage of the current drive node 4 is decreasedrapidly (see a dashed line representing the current drive node 4 in theperiod from timing T2 to 13 in FIG. 12).

In this way, according to the third exemplary embodiment, if theresistive memory element 2 is in a high resistance state, the voltagedecrease rate of the current drive node 4 is slow. In contrast, if theresistive memory element 2 is in a low resistance state, the voltagedecrease rate of the current drive node 4 is fast. In the nextdetermination period, whether the voltage decrease rate is faster orslower than that of the reference resistor Rref2 is determined.

Next, the period from timing T3 to T4 is a determination period. Whenthe voltage of the reference current drive node 44 is decreased to V3(=VDD−|VTP|), the PMOS transistor P5 in the reference read determinationcircuit 72 in the reference data line control circuit 76 is turned onand the node 20 a (reference read node) is changed from a low level to ahigh level (at timing T3). In response to this change, the one-shotcircuit 48 outputs a low-level control signal RJB in one shot untiltiming T4. In this one-shot period (determination period), a readdetermination circuit 12 in each data line control circuit 36 determineswhether the voltage of a corresponding current drive node 4 is higher orlower than the voltage V3 (namely, whether the voltage decrease rate ishigher or slower than that of the reference resistor Rref2) and storesthe determination result in the latch circuit FF1 in a correspondingdata input/output circuit 11.

Next, at timing T4, in response to the change of the control signal RJBfrom a low level to a high level, the data control circuit 37 sets thecontrol signal WAB to a high level and the control signal PRB to a lowlevel. In addition, the amplitude decrease ΔVC1 of the control signalVWAVC1 is set back to 0. As a result, the nodes 1 a and 11 a are resetto VSS and the reference current drive node 44 and the current drivenode 4 are reset to VDD.

At the next timing T5, the reference data line 43 and each data line 3are reset to VSS. In this way, the read operation is completed.

While at timing T2 the voltage of the nodes 1 a and 11 a is decreased bythe amplitude voltage ΔVC2, this is to set the time period from timingT2 to timing T3 to an appropriate time period in view of circuitoperation. Without this decrease by the amplitude voltage ΔVC2, thereference current drive node 44 would be decreased quickly andexcessively, and the time period from timing T2 to timing T3 would beshortened to be approximately the same as the one-shot width of thecontrol signal RJB. Since the voltage of the reference current drivenode 44 significantly changes in the period from timing T3 to timing T4,the resistance value cannot accurately be determined.

In contrast, if the amplitude voltage ΔVC2 were excessively increased,the voltage decrease rate of the reference current drive node 44 wouldbe very slow. As a result, the read operation would be slowed. The timeperiod from timing T2 to T3 can be adjusted by the capacitance C2 andthe amplitude voltage ΔVC1 of the control signal VWAVC1. Particularly,if determination resistance is changed in a semiconductor deviceoperation test, the reference resistor Rref2 may be changed by fusetrimming or the like. In this case, by simultaneously adjusting theamplitude voltage ΔVC1 to an appropriate value in addition to thereference resistor Rref2, the time period for the read operation can bemaintained to be a certain time period as desired.

Through the read operation as described above, whether the resistancevalue of the resistive memory element 2 is higher or lower than that ofthe reference resistor Rref2 is read.

As described above, the third exemplary embodiment provides the sameadvantageous effects as those provided by the first and second exemplaryembodiments. Namely, in the same way as the read data line drive circuit243 according to the related techniques illustrated in FIGS. 22A and22B, each read data line drive circuit 33 can perform feedback controland can charge a corresponding data line 3 quickly and accurately up tothe voltage of the reference signal VREADREF. In addition, since eachfeedback circuit 34 according to the third exemplary embodiment can beconfigured as a circuit with a simple configuration, a plurality of dataline control circuits 36 can be arranged at shorter intervals. As aresult, the number of memory cells MC to be read simultaneously in asingle cell read operation can be increased, and high-speed data outputcan be realized.

In addition, according to the third exemplary embodiment, not only eachdata line 3 can be charged quickly and accurately, but also theresistance state of each resistive memory element 2 can be read with acircuit having a simple configuration.

In addition, according to the third exemplary embodiment, the feedbackcircuit voltage generator 112 is maintained inactive in the wait periodand the determination period. Thus, the semiconductor device accordingto the third exemplary embodiment can operate with lower powerconsumption, compared with that according to the second exemplaryembodiment in which the feedback circuit voltage generator 112 aremaintained active in these periods. In addition, according to the thirdexemplary embodiment, since each current drive circuit 35 does notsupply the current iR to a corresponding current drive node 4, thesemiconductor device according to the third exemplary embodiment canoperate with low power consumption, compared with that according to thesecond exemplary embodiment in which each current drive circuit 35supplies the current iR to a corresponding current drive node 4. Inaddition, according to the third exemplary embodiment, by causing eachNMOS transistor N1 to operate in a region where the sub-thresholdcurrent is small (for example, at the operation point B in FIG. 13), thesemiconductor device can operate with even lower power consumption.

According to the third exemplary embodiment, as illustrated in FIG. 11,each feedback circuit 34 includes the NMOS transistor (third switchelement) N3 and the second capacitive element C2, in addition to theelements in the feedback circuit (24 in FIG. 6) according to the secondexemplary embodiment. However, the feedback circuit 34 is not limited tosuch configuration. An arbitrary feedback circuit is applicable as longas the feedback circuit has a function of increasing the potential ofthe node 2 a (second node) when the potential of the data line 3 islower than VREADREF and of decreasing the potential of the node 2 a(second node) when the potential of the data line 3 is higher thanVREADREF. For example, the NMOS transistor N3 and the second capacitiveelement C2 may be arranged between the output terminal of thedifferential amplifier AMP3V in the feedback circuit 244 and the gate ofthe NMOS transistor N1 according to the related techniques illustratedin FIGS. 22A and 22B. In such case, while the feedback circuit does nothave a simple configuration, not only the charging of the data line 3but also the reading of the resistance state of the resistive memoryelement 2 can be achieved without adding a circuit. In addition, lowerpower consumption can be achieved.

Fourth Exemplary Embodiment Configuration According to Fourth ExemplaryEmbodiment

Next, a configuration according to a fourth exemplary embodiment will bedescribed with reference to FIGS. 14 and 15. A semiconductor deviceaccording to the fourth exemplary embodiment includes a data linecontrol circuit 46, a reference data line control circuit 86, and a datacontrol circuit 47 in FIG. 14, in place of the data line control circuit36, the reference data line control circuit 76, and the data controlcircuit 37 in the semiconductor device according to the third exemplaryembodiment, respectively. In FIG. 14, the data line control circuit 46differs from the data line control circuit 36 in that a feedback circuit64 has the same configuration as that of the feedback circuit 24according to the second exemplary embodiment. In addition, as in thesecond exemplary embodiment, the gate of the PMOS transistor P7 in thedata input/output circuit 11 is coupled to the control signal PRB.

Likewise, a feedback circuit 84 in the reference data line controlcircuit 86 in FIG. 14 has the same configuration as that of the feedbackcircuit 24 according to the second exemplary embodiment. In addition,the gate of the PMOS transistor P7 in the data input/output circuit 71is coupled to the control signal PRB. In the fourth exemplaryembodiment, constituent elements having the same functions as those inthe second or third exemplary embodiment are denoted by the likereference characters, and redundant description will be omitted.

FIG. 15 is a circuit diagram illustrating a part of the data controlcircuit 47. In FIG. 15, the constant current mirror source circuit 51and the VINREF generator 52 are the same as those according to the thirdexemplary embodiment. In contrast, compared with the feedback circuitvoltage generator 112 according to the third exemplary embodiment, afeedback circuit voltage generator 114 has an extended function. Morespecifically, the feedback circuit voltage generator 114 additionallyinputs a judge reference signal VJUDGEREF and selects and outputs one ofthe voltage V1 (=VREADREF+|VTP|) and a voltage V4 (=JUDGEREF+|VTP|).

As illustrated in FIG. 15, a PMOS transistor P14V and a PMOS transistorP13V generate the voltage V4 to a node 6 a. In addition, the feedbackcircuit voltage generator 114 includes PMOS transistors P15V and P16Vand an inverter circuit INV2V and switches the node 3 a and the node 6 aon the basis of the logic of the control signal PRB to output a voltageto a node 7 a. The regulator circuit 41 inputs the voltage of the node 7a.

As is the case with the PMOS transistor P1V, it is desirable that thePMOS transistor P13V and the PMOS transistor P1 in FIG. 14 be formed inthe same process. By using the same process, the accuracy in matchingthe channel length and the channel width of the two PMOS transistors(P1, P13V) can be improved, and the two PMOS transistors can have thesame current drive capability. Thus, the voltage of the node 6 a canaccurately be matched to a voltage, which is a sum of VJUDGEREF and theabsolute value |VTP| of the threshold voltage of the PMOS transistor P1.In addition, as will be described below, the voltage of the judgereference signal VJUDGEREF is the determination level for each data line3. Thus, it is desirable that this voltage be set at a level somewhatlower than the voltage of the read reference signal VREADREF (see ΔVC3in FIG. 16).

Operation According to Fourth Exemplary Embodiment

Next, an operation according to the fourth exemplary embodiment will bedescribed with reference to FIG. 16. FIG. 16 is a waveform diagramillustrating a read operation of the semiconductor device according tothe fourth exemplary embodiment. In the upper portion in FIG. 16, thevoltages of the control signals ENB and PRB are illustrated. In themiddle portion in FIG. 16, the voltages of the data line 3, thereference data line 43, the current drive node 4, the reference currentdrive node 44, the node 11 a, and the feedback circuit power supply areillustrated. In addition, in the lower portion in FIG. 16, the voltageof the node 20 a (reference read node) and the node 10 a (read node) areillustrated. Among these waveforms, those corresponding to a memory cellin a high resistance state are represented by solid lines, thosecorresponding to a memory cell in a low resistance state are representedby dashed lines, and those relating to the reference control circuit arerepresented by dotted lines.

In FIG. 16, as in the second and third exemplary embodiments, in theperiod from timing T1 to T5, a word line WL and a multiplexer address BAcorresponding to a data-read-target memory cell MC remain active.

The period from timing T1 to T2 is a charging period of the data line 3.In this period, since both the control signals ENB and PRB are set to alow level, the node 7 a (FIG. 15) is set to the voltage V1 and thefeedback circuit power supply VFB outputs the voltage V1. As a result,as in the second and third exemplary embodiments, the data line 3 andthe reference data line 43 are charged with the voltage VREADREF. Inaddition, by changing the control signal PRB to a low level at timingT1, the PMOS transistor P7 is turned on and the latch circuit FF1 isreset. As a result, the node 10 a (read node) and the node 20 a(reference read node) are initialized to a low level. In addition, inthe period from timing T1 to T2, since the PMOS transistors P4 in thecurrent drive circuits 35 and 75 are turned on, the current drive node 4and the reference current drive node 44 are driven to VDD.

Next, the period from the timing T2 to T3 is a wait period. By changingthe control signal PRB to a high level at timing T2, the voltage of thenode 7 a (FIG. 15) is changed to the voltage V4 and the feedback circuitpower supply VFB outputs the voltage V4. As a result, the determinationlevel of the data line 3 in the feedback circuit 64 and thedetermination level of the reference data line 43 in the feedbackcircuit 84 are set to a voltage which is lower than the voltage V4 bythe absolute value |VTP| of the threshold voltage of the PMOS transistorP1, namely, to VJUDGEREF. Thus, since the voltage of the data line 3 andthe reference data line 43 is VREADREF, which is a voltage higher thanVJUDGEREF immediately after timing T2, the PMOS transistor P1 is turnedoff and the voltage of the nodes 1 a and 11 a is decreased close to VSS.Accordingly, the NMOS transistor N1 is turned off. In addition, sincethe control signal PRB is set to a high level in the period from timingT2 to T3, the current drive circuits 35 and 75 stop supplying thevoltage VDD. As a result, while the current drive node 4 and thereference current drive node 44 are set in a floating state immediatelyafter timing T2, these nodes 4 and 44 hold a voltage close to VDDbecause of the parasitic capacitance thereof.

After timing T2, since charges accumulated by the large parasiticcapacitance of the reference data line 43 are decreased by the currentflowing through the reference resistor Rref2, the voltage of thereference data line 43 is gradually decreased (reference data line 43:dotted line in the period from timing T2 to T3 in FIG. 16). Next, whenthe reference data line 43 is decreased to the voltage VJUDGEREF attiming 13, the PMOS transistor P1 is turned on to increase the voltageof the node 11 a to a high voltage and turn on the NMOS transistor N1.When the NMOS transistor N1 is turned on, the voltage of the referencecurrent drive node 44 is decreased from VDD to the voltage of thereference data line 43 (reference current drive node 44: dotted line attiming T3 in FIG. 16).

Likewise, the voltage of the data line 3 is also decreased gradually onthe basis of the current that flows depending on the resistance value ofa corresponding resistive memory element 2 (data line 3 in the periodfrom timing T2 to T3 in FIG. 16). If the resistive memory element 2 isin a low resistance state, the voltage of the corresponding data line 3is decreased to the voltage VJUDGEREF before timing T3. Thus, thecurrent drive node 4 in the data line control circuit 46 is decreased tothe voltage of the data line 3 before timing T3 (current drive node 4:dashed line in the period from timing T2 to T3 in FIG. 16).

In contrast, if the resistive memory element 2 has a high resistancestate, the voltage of the corresponding data line 3 is not decreased tothe voltage VJUDGEREF at timing T3. Thus, the current drive node 4 inthe data line control circuit 46 holds a voltage close to VDD (currentdrive node: solid line in the period from timing T2 to T3 in FIG. 16).

As described above, according to the fourth exemplary embodiment, if theresistive memory element 2 has a resistance state lower than that of thereference resistor Rref2, the potential decrease rate of the currentdrive node 4 is faster than that of the reference drive node 44. Incontrast, if the resistive memory element 2 has a resistance statehigher than that of the reference resistor Rref2, the potential of thecurrent drive node 4 has not been decreased yet at timing when thepotential of the reference drive node 44 has already been decreased.

The period from timing T3 to T4 is a determination period. At timing T3,if the reference current drive node 44 is decreased to a voltage lowerthan the voltage V3, the PMOS transistor P5 in the reference readdetermination circuit 72 is turned on and the node 20 a (reference readnode) is changed from a low level to a high level. In response to thischange, the one-shot circuit 48 outputs a low-level control signal RJBin one shot until timing T4. In this one-shot period (determinationperiod), a read determination circuit 12 in each data line controlcircuit 46 determines whether a corresponding current drive node 4 has avoltage higher or lower than the voltage V3 and stores the determinationresult in a corresponding latch circuit FF1 in each data input/outputcircuit 11.

At timing T4, in response to the change of the control signal RJB from ahigh level to a low level, the data control circuit 47 sets the controlsignal ENB to a high level. As a result, the feedback power supplyvoltage VFB, the node 1 a, and the node 11 a are decreased to VSS.

Next, at timing T5, the reference data line 43 and each data line 3 arereset to VSS. In this way, the read operation is completed.

With the voltage ΔVC3 (=VREADREF−VJUDGEREF), the time period from timingT2 to T3 can be set to an appropriate time period in view of circuitoperation. The reason for, the advantageous effects provided by, and theadjustment method of setting such appropriate time period are the sameas those described in relation to the adjustment of the amplitudevoltage ΔVC1 of the control signal VWAVC1 according to the thirdexemplary embodiment.

Through the above read operation, whether the resistance value of theresistive memory element 2 is higher or lower than that of the referenceresistor Rref2 is determined.

As described above, the fourth exemplary embodiment provides the sameadvantageous effects as those provided by the first and second exemplaryembodiments. Namely, in the same way as the read data line drive circuit243 according to the related techniques illustrated in FIGS. 22A and22B, each read data line drive circuit 143 can perform feedback controland can charge a corresponding data line 3 quickly and accurately up tothe voltage of the reference signal VREADREF. In addition, since eachfeedback circuit 64 according to the fourth exemplary embodiment can beconfigured as a circuit with a simple configuration, a plurality of dataline control circuits 46 can be arranged at shorter intervals. As aresult, the number of memory cells MC to be read simultaneously in asingle cell read operation can be increased, and high-speed data outputcan be realized.

Each feedback circuit 64 according to the fourth exemplary embodimentcan be configured without the third switch element N3 and the secondcapacitive element C2 in the feedback circuit 34 according to the thirdexemplary embodiment (namely, the feedback circuit 64 can have the sameconfiguration as that of the feedback circuit 24 according to the secondexemplary embodiment). In this way, each data line control circuit 46according to the fourth exemplary embodiment can have a simplerconfiguration than that of each data line control circuit 36 accordingto the third exemplary embodiment.

In addition, according to the fourth exemplary embodiment, as is thecase with the third exemplary embodiment, since each current drivecircuit 35 does not supply the current iR to a corresponding currentdrive node 4, the semiconductor device according to the fourth exemplaryembodiment can operate with lower power consumption than thesemiconductor device according to the second exemplary embodiment inwhich each current drive circuit 35 supplies the current iR to acorresponding current drive node 4.

In addition, according to the fourth exemplary embodiment, not only eachdata line 3 can be charged quickly and accurately, but also theresistance state of each resistive memory element 2 can be read with acircuit having a simple configuration.

Fifth Exemplary Embodiment Configuration According to Fifth ExemplaryEmbodiment

Next, a configuration according to a fifth exemplary embodiment will bedescribed with reference to FIGS. 17 to 19. The configuration accordingto the fifth exemplary embodiment includes a simple write determinationfunction, in addition to the configuration in the fourth exemplaryembodiment. The fifth exemplary embodiment will be described with afocus on the simple write determination function. Constituent elementshaving the same functions as those in the fourth exemplary embodimentare denoted by the like reference characters, and redundant descriptionwill be omitted.

First, the background of the fifth exemplary embodiment will bedescribed. Write control of a resistive memory element (namely, controlof change of the resistance value of a resistive memory element to ahigher/lower value) is performed by applying a voltage across theresistive memory element. It is known that, in the case of a resistivememory element such as a ReRAM, resistance values obtained after a writevoltage is applied have a statistical distribution and that theresistance value stochastically changes within such distribution eachtime a write voltage is applied. Thus, after a write voltage is onceapplied, a “write and read” operation is performed. In this “write andread” operation, whether the resistance value has been changed within adesired range by a read operation on the basis of the accurate readvoltage VREADREF illustrated in FIG. 16 or the like is determined(namely, whether a write operation has been completed successfully isdetermined). In addition, if a memory cell is not successfully written,the “write and read” operation needs to be performed again only on suchmemory cell, and until all the memory cells are successfully written,the “write and read” operation is repeated. Namely, the accuracy of thewrite operation needs to be verified. However, each time a write voltageis applied, a long data line charging period is required in a readoperation. Thus, if the write success rate is low, more “write and read”operations need to be performed. As a result, much time is requireduntil all the memory cells are successfully written, counted as aproblem.

In the fifth exemplary embodiment, to solve this problem, the followingsequence is performed when a plurality of memory cells aresimultaneously written. Namely, after each write circuit 58 applies alarge voltage to a corresponding data line 3 for writing, the writecircuit 58 is stopped, the parasitic capacitance of the data line 3 isdischarged by the resistance of a corresponding memory cell MC, and thevoltage of the data line 3 is determined after a predetermined time. Inthis way, a simple determination for determining “probably successfullywritten” or “probably unsuccessfully written” is performed. If a memorycell is determined to have probably unsuccessfully been written, thecycle, in which a large voltage is applied to a corresponding data line3 by a corresponding write circuit 58 again only on such memory cell,the data line 3 is discharged, and the voltage of the data line 3 issimply determined after a predetermined time, is repeated a plurality oftimes. Subsequently, whether the resistance value has been changedwithin a desired range by a read operation on the basis of the accurateread voltage VREADREF illustrated in FIG. 16 or the like is accuratelydetermined (namely, whether a write operation has been completedsuccessfully is accurately determined). The above sequence according tothe fifth exemplary embodiment will be referred to as “a simple writedetermination and read” operation. Since a write voltage application anda simple determination are repeated a plurality of times in a single“simple write determination and read” operation, the write success ratecan be increased. As a result, the overall write time can be shortened.

Generally, the resistance value of a resistive memory element such as aReRAM has bias dependence (not ohmic resistance). Thus, reading needs tobe performed with an accurate read voltage (VREADREF). In addition, whena voltage (for example, a write voltage) larger than the read voltage(VREADREF) is applied to the resistive memory element, the resistancevalue of the resistive memory element may change. In addition, there areresistive memory elements whose resistance value may change in a waitperiod in which discharging is performed. For these reasons, in theabove simple determination, the writing can only be determined to haveprobably been succeeded or failed. Thus, according to the fifthexemplary embodiment, as described above, at the end of a single “simplewrite determination and read” operation, an accurate read operation isperformed with the read voltage (VREADREF).

FIG. 17 is a circuit diagram of a data line control circuit 56 and areference data line control circuit 96 in a semiconductor deviceaccording to the fifth exemplary embodiment. When FIG. 17 is comparedwith FIG. 14 (the fourth exemplary embodiment), it becomes clear thatthe write circuit 58, a reference write circuit 98, and a feedbackcircuit voltage generator 116 in FIG. 17 are changed from those in FIG.14 and that a one-shot circuit 49 is newly added in FIG. 17. Other thanthese constituent elements, those having substantially the samefunctions as those in the fourth exemplary embodiment are denoted by thelike reference characters, and redundant description will be omitted.

The write circuit 58 in the data line control circuit 56 will bedescribed with reference to FIG. 18. In FIG. 18, the write circuit 58includes a data line drive circuit 120, a latch circuit FF2, and NMOStransistors (second transistors N1W, N2W, N3W). The data line drivecircuit 120 includes two PMOS transistors P1W and P2W coupled in serieswith each other. The PMOS transistor P1W has a gate supplied with awrite timing signal and the PMOS transistor P2W has a gate coupled to anoutput from the latch circuit FF2. With this configuration, when boththe write timing signal and the output from the latch circuit FF2 are ata low level, the two PMOS transistors P1 W and P2W are set in aconductive state. As a result, the voltage VDD is applied to each dataline 3.

The two NMOS transistors N2W and N3W are coupled in series with eachother between an input node of the latch circuit FF2 and the ground VSS.The NMOS transistor N2W has a gate supplied with an output signal WJTfrom the one-shot circuit 49. The NMOS transistor N3W has a gate coupledto the node 1 a. With this configuration, when the node 1 a is a highlevel, if the one-shot circuit 49 outputs a one-shot signal and thesignal WJT is set to a high level, the two NMOS transistors N2W and N3Ware set in a conductive state, a write flag signal WRITE_FLAG isinactivated (low level), and the data line drive circuit 120 isinactivated.

In addition, the NMOS transistor N1W has one of a source and a draincoupled to the input node of the latch circuit FF2 and the other one ofthe source and the drain supplied to write data 59. In addition, theNMOS transistor N1W has a gate supplied with a data transfer signal.With this configuration, when the latch circuit FF2 is set on the basisof the write data 59, the data transfer signal is set to a high leveland the logic level of the write data is inputted to the input node ofthe latch circuit FF2.

Next, the reference write circuit 98 in the reference data line controlcircuit 96 will be described with reference to FIG. 19. When FIG. 19 iscompared with FIG. 18, it becomes clear that a PMOS transistor P3W isarranged in FIG. 19 in place of the NMOS transistor N1W in FIG. 18. ThePMOS transistor P3W has a gate supplied with the write timing signal. Inaddition, the data line 3, WRITE_FLAG, the write data 59, and WJT in thewrite circuit 58 in FIG. 18 are replaced by the reference data line 43,REF_WRITE_FLAG, VDD), and VDD in the reference write circuit 98 in FIG.19, respectively. In addition, REF_WRITE_FLAG (an input signal of thelatch circuit FF2) in FIG. 19 is coupled to an input node of theone-shot circuit 49 and is used for generating a one-shot signal.

With this configuration, each time the write timing signal is set to alow level (activated) in the reference write circuit 98, the two PMOStransistors P1 W and P2W are set in a conductive state and the voltageVDD is applied to the reference data line 43. In addition, when thewrite timing signal is at a high level, if the node 11 a is changed to ahigh level. REF_WRITE_FLAG is changed to a low level.

The write circuit 58 in FIG. 18 uses the voltage of the node 1 a toperform a simple determination. In a read operation according to thesecond to fourth exemplary embodiments, change of the voltage of thecurrent drive node 4 is detected. However, since the current drivecircuit 35 is not operated in a write operation, the current drive node4 cannot be used for a simple determination. Thus, change of the voltageof the node 1 a is used for a simple determination. When the voltage ofthe data line 3> a simple write determination reference VWJREF, the PMOStransistor P1 is turned off, and the node 1 a is set to a low level (thesimple write determination reference VWJREF is a determination voltagewhen the data line 3 is discharged. This voltage will be described indetail with reference to FIG. 20 below). In contrast, if the voltage ofthe data line 3< the simple write determination reference VWJREF, thePMOS transistor P1 is turned on and the node 1 a is set to a high level.Thus, whether the voltage of the data line 3 discharged in a wait periodis higher or lower than the simple write determination reference VWJREFcan be determined by the voltage of the node 1 a.

The reference write circuit 98 in FIG. 19 also uses change of thevoltage of the node 11 a when a simple determination is performed. Ifthe voltage of the reference data line 43> the simple writedetermination reference VWJREF, the PMOS transistor P1 is turned off andthe node 11 a is set to a low level. In contrast, if the voltage of thereference data line 43< the simple write determination reference VWJREF,the PMOS transistor P1 is turned on and the node 11 a is set to a highlevel. Thus, whether the voltage of the reference data line 43discharged in a wait period is higher or lower than the simple writedetermination reference VWJREF can be determined by the voltage of thenode 11 a.

Next, the one-shot circuit 49 in FIG. 17 will be described. The one-shotcircuit 49 has a function of outputting a one-shot signal WJT when thereference write circuit 98 changes the signal REF_WRITE_FLAG from a highlevel to a low level. The one-shot signal is a pulse that is set to ahigh level in a simple determination period (see FIG. 20). As describedabove, since the signal REF_WRITE_FLAG changes to a low level when thenode 11 a changes to a high level, the one-shot signal is generated whenthe node 11 a changes to a high level. Since the interconnect of thesignal WJT is coupled to the gate of the NMOS transistor N2W in thewrite circuit 58, the WRITE_FLAG in the write circuit 58 is controlledby the one-shot signal.

Next, the feedback circuit voltage generator 116 in FIG. 17 will bedescribed. In the fourth exemplary embodiment, the feedback circuitvoltage generator 114 inputs two voltages (VREADREF and VJUDGEREF) andis configured to be capable of switching corresponding output voltages(V1 and V4) (see FIG. 15). The feedback circuit voltage generator 116according to the fifth exemplary embodiment further includes the simplewrite determination reference voltage VWJREF as an input to generate andoutput a corresponding output voltage VWJ1 (=VWJREF+|VTP|). While adetailed circuit diagram of the feedback circuit voltage generator 116is not illustrated, it is only necessary to add a circuit for generatingthe voltage VWJ1 to the circuit for generating the voltages of the node3 a and the node 6 a in FIG. 15.

Operation According to Fifth Exemplary Embodiment

Next, an operation according to the fifth exemplary embodiment will bedescribed with reference to FIG. 20. FIG. 20 illustrates a sequence ofthe above “simple write determination and read” operation performed whena write operation is performed with write data supplied from the outsideto a plurality of memory cells via a plurality of data line controlcircuits 56, respectively. The write operation assumes a SET writeoperation (namely, a write operation in which a low resistance state isset). When the write data represents a logical value “1,” the writeoperation is performed.

In the upper portion in FIG. 20, the control signals ENB and PRB, theread/write buses RWBS, and the data transfer signal and the write timingsignal supplied to the write circuit 58 are illustrated. In the middleportion in FIG. 20, the voltages of the feedback circuit power supplyVFB, the data line 3, the reference data line 43, the node 1 a, and thenode 11 a are illustrated. In the lower portion in FIG. 20, the signalWJT, which is an output from the one-shot circuit 49, and the write flagsignal WRITE_FLAG are illustrated. Among these waveforms, thosecorresponding to a memory cell in a high resistance state arerepresented by solid lines, those corresponding to a memory cell in alow resistance state are represented by dashed lines, and those relatingto the reference control circuit are represented by dotted lines.

In FIG. 20, first, a write command is inputted to the terminal COM inFIG. 10 at timing TW1. Next, the period from timing TW2 to TW3 is a datainput period in which write data is inputted via DQ terminals in FIG. 10and the write data is sequentially captured in the latch circuits FF1 inthe data line control circuits 56 via the read/write buses RWBS,respectively.

Next, the sequence of the “simple write determination and read”operation starts at timing TW3. First, at timing TW3, the data transfersignal is activated in one shot, and the write data held in the latchcircuits FF1 is inputted to the write circuits 58 and is captured in thelatch circuits FF2 in the write circuits 58, respectively. Here, thewrite flag signals WRITE_FLAG of the write circuits 58 corresponding tomemory cells MC on which a SET write operation is performed are set to ahigh level. In addition, at timing TW3, the control signal ENB is set toa low level, the feedback circuit voltage generator 116 is activated,and the feedback circuit voltage VFB is set to the voltage VWJ1.

Next, the period from timing TW41 to TW71 is a simple writedetermination period in cycle 1 in which a write voltage application andsimple determination are performed. First, at timing TW41, the writetiming signal is set to an active low level. In each data line controlcircuit 56 where the write flag signal WRITE_FLAG is at a high level,the write voltage VDD is applied to the data line 3 in the period fromtiming TW41 to TW51 (write drive period). Since the voltage (VDD) of thedata line 3> the simple write reference VWJREF, the node 1 a is changedto a low level.

Next, the period from timing TW51 to TW61 is a wait period. At timingTW51, the write timing signal is set to an inactive high level, and eachwrite circuit 58 stops applying the voltage VDD. In this period, thedata lines 3 release charges accumulated in the parasitic capacitancethereof via the respective memory cells MC. At this timing, if aresistive memory element 2 has a low resistance value due to a SET writeoperation, the voltage of the corresponding data line 3 is quicklydecreased. In contrast, if a resistive memory element 2 has a highresistance value, the voltage of the corresponding data line 3 isgradually decreased.

In the wait period from timing TW51 to TW61, also in the reference dataline control circuit 96, the reference data line 43 releases chargesaccumulated in the parasitic capacitance thereof via the referenceresistor Rref2. When the reference data line 43 is decreased to thevoltage VWJREF at timing TW61, the node 11 a is changed to a high level.In addition, in response to the change of the node 11 a, the referencewrite circuit 98 in FIG. 19 changes the reference write flag signalREF_WRITE_FLAG from a high level to a low level. In addition, theone-shot circuit 49 receives this change, and outputs a one-shot signalas the control signal WJT in the period from timing TW61 to TW71 (simpledetermination period).

In the period from timing TW61 to TW71 (simple determination period), ifa node 1 a is changed to a high level, namely, if the voltage of a dataline 3 is significantly changed to be equal to or lower than the voltageVWJREF, the corresponding write flag signal WRITE_FLAG is changed to alow level. This means that the resistive memory element 2 has aresistance value lower than that of the reference resistor Rref2 andthat the SET write operation has probably been succeeded. In contrast,if in this simple determination period a node 1 a is changed to a lowlevel, namely, if the voltage of a data line 3 is not significantlychanged and is equal to or higher than the voltage VWJREF, thecorresponding write flag signal WRITE_FLAG remains at a high level. Thismeans that corresponding the resistive memory element 2 has a resistancevalue higher than that of the reference resistor Rref2 and that the SETwrite operation has probably failed.

As illustrated in FIG. 20, in the simple determination period, when theresistive memory element 2 is in a low resistance state, the data line 3(dashed line) has been decreased to be lower than the voltage VWJREF andthe corresponding write flag signal WRITE_FLAG (dashed line) has beenchanged to a low level. In contrast, when the resistive memory element 2is in a high resistance state, the data line 3 (solid line) is above thevoltage VWJREF and the write flag signal WRITE_FLAG (solid line) remainsat a high level.

Next, the period from timing TW42 to TW72 is a simple writedetermination period in cycle 2 in which a write voltage application anda simple determination are performed. The write flag signal WRITE_FLAGof the write circuit 58 corresponding to a memory cell MC that has notprobably successfully been written in cycle 1 remains at a high level.In cycle 2, if a write flag signal WRITE_FLAG remains at a high level,only the corresponding memory cell MC is written. More specifically, inthe period from timing TW42 to TW52 (write drive period), the writetiming signal is set to an active low level, and the write voltage VDDis applied to the data line 3 corresponding to the write circuit 58having a high-level write flag signal WRITE_FLAG. In contrast, since thewrite flag signals WRITE_FLAG of the other write circuits 58corresponding to the memory cells that have probably successfully beenwritten in cycle 1 are set to a low level, the write voltage is notapplied to the corresponding data lines 3.

The reference write flag signal REF_WRITE_FLAG of the reference writecircuit 98 is set to an active high level by the activation of the writetiming signal from timing TW42 to TW52, and the write voltage VDD isapplied to the reference data line 43.

Next, the period from timing TW52 to TW62 is a wait period in cycle 2and the period from timing TW62 to TW72 is a simple determination periodin cycle 2. As illustrated in FIG. 20, regarding the memory cell thathas not probably successfully been written in cycle 1, the voltage(solid line) of the data line 3 is decreased to VWJREF or lower in thesimple determination period in cycle 2. Namely, the memory cell hasprobably successfully been written. In addition, consequently, thecorresponding write flag signal WRITE_FLAG is changed to a low level(solid line).

Next, the period from timing TW43 to TW53 is a period in cycle 3. Inthis period, the write voltage VDD is applied only to data lines 3corresponding to memory cells MC that have not probably successfullybeen written in cycle 2. In cycle 3, the operation in the wait periodand the operation in the simple determination period are not performed.This is to perform an accurate read operation subsequently.

Next, at timing TW8, by setting the control signal ENB to a high level,the feedback circuit voltage VFB is inactivated. Next, a read operationas illustrated in FIG. 16 (the fourth exemplary embodiment) is performedto check whether each resistance value falls within a desired range byan accurate read operation. A result indicating successful writing orunsuccessful writing is stored in a latch circuit FF1 in each datainput/output circuit 11. The above operation from timing TW3 to TW9 is asingle “simple write determination and read” operation. In thisoperation, since a write voltage application and a simple determinationare repeated a plurality of times, the write success rate can besignificantly increased, compared with a case in which the write voltageis applied only once.

Next, only for data line control circuits 56 that have not successfullybeen written in the first “simple write determination and read”operation, the corresponding write flag signals WRITE_FLAG are set to anactive high level at a start timing of the second “simple writedetermination and read” operation and a write operation is performed.Until all the memory cells MC are successfully written, the “simplewrite determination and read” operation is repeated.

As described above, the fifth exemplary embodiment provides thefollowing advantageous effects. According to the fifth exemplaryembodiment, each feedback circuit 54 is used for a simple writedetermination. Namely, a simple write determination can be performedwith a simple circuit configuration. As a result, a plurality of dataline control circuits 56 having a simple write determination functioncan be arranged at shorter intervals. In addition, the write time(including verification) can be shortened.

In the sequence illustrated in FIG. 20, a single “simple writedetermination and read” operation includes three cycles. However, thepresent disclosure is not limited to such example. In addition, the waitperiod and the simple determination in the last cycle may be omitted asdescribed above.

In addition, FIG. 20 illustrates a case in which a SET write operation(a write operation in which a low resistance state is set). However,alternatively, the same method according to the fifth exemplaryembodiment is applicable to a RESET write operation (a write operationin which a high resistance state is set). In such case, when change ofthe voltage of a data line 3 in a wait period is small (set to a highresistance state), it can be determined that writing has probably beensucceeded and when change of the voltage of a data line 3 in a waitperiod is large (remaining in a low resistance state), it can bedetermined that writing has not probably been succeeded.

Sixth Exemplary Embodiment

Next, a sixth exemplary embodiment will be described with reference toFIG. 21. FIG. 21 is a circuit diagram of a data line control circuit anda reference data line control circuit in a semiconductor deviceaccording to a sixth exemplary embodiment. When FIG. 21 is compared withFIG. 14 (the fourth exemplary embodiment). FIG. 21 further includes anultra-high resistance determination circuit 160. The ultra-highresistance determination circuit 160 is added for determining aninsulated state or an ultra-high resistance state of a resistive memoryelement 2. Other elements that are the same as those in FIG. 14 aredenoted by the like reference characters, and redundant descriptionthereof will be omitted.

First, the background of the addition of the ultra-high resistancedetermination circuit 160 will be described. After formed, sinceresistive memory elements such as ReRAMs using metal oxide are in aninsulated state or in an ultra-high resistance state, these resistivememory elements do not perform a switching operation with a normal writevoltage. Thus, processing referred to as forming processing in which ahigh voltage is applied to resistive memory elements is performed. Inthis way, the resistive memory elements are initialized to be capable ofperforming a switching operation between a high resistance state and aresistance state.

In a test for determining voltage conditions in forming processing, aread circuit is required to perform an ultra-high resistance measurementmode in which an ultra-high resistance state is determined. In order toperform a read operation in such ultra-high resistance measurement mode,for example, the resistance value of the reference resistor Rref2 inFIG. 14 according to the fourth exemplary embodiment (FIG. 14) can beswitched to an ultra-high resistance. However, since the reference dataline 43 is coupled to the dummy MUXs 57 and the like as illustrated inFIG. 10, a minute leakage current may be caused by a defect or the like.If such leakage current is larger than the current by the ultra-highresistance value of the reference resistor Rref2, since the controlsignal RJB generated in the reference data line control circuit 86 isaffected by the leakage current, all the data line control circuits 46receiving the control signal RJB do not properly operate, counted as aproblem.

To solve this problem, the sixth exemplary embodiment includes theultra-high resistance determination circuit 160 illustrated in FIG. 21,as a circuit configuration appropriate for the ultra-high resistancemeasurement mode. The ultra-high resistance determination circuit 160includes a first capacitive element C1 and an NMOS transistor N6, andthe first capacitive element C1 has one end coupled to the referencedata line 43 via the NMOS transistor N6. In addition, the firstcapacitive element C1 has the other end coupled to the ground VSS. Inaddition, the NMOS transistor N6 has a gate supplied with a measurementmode signal MODE1.

When the measurement mode signal MODE1 is set to a low level, the NMOStransistor N6 is turned off, and the semiconductor device operates inthe normal measurement mode as in the fourth exemplary embodiment. Incontrast, when the measurement mode signal MODE1 is set to a high level,the NMOS transistor N6 is turned on, and the semiconductor deviceoperates in the ultra-high resistance measurement mode. Namely,according to the sixth exemplary embodiment, by using the measurementmode signal MODE1, the semiconductor device is configured to be capableof switching modes between the normal measurement mode and theultra-high resistance measurement mode.

In the ultra-high resistance measurement mode, the capacitance value C1of the first capacitive element is added to the interconnect capacitanceof the reference data line 43. While the reference resistor Rref2 is notset to an ultra-high resistance state, addition of the first capacitiveelement C1 realizes discharging characteristics equivalent to thoseobtained by setting the reference resistor Rref2 to an ultra-highresistance state.

For example, if the capacitance value C1 of the first capacitive elementis set to a value 100 times larger than that of the reference data line43, the determination resistance value is set to a value 100 timeslarger than the resistance value of the reference resistor Rref2. Inthis case, if a minute leakage current caused by a defect or the like issufficiently smaller than the current value flowing through thereference resistor Rref2, the determination resistance error can bereduced, and the ultra-high resistance measurement mode can be performedproperly.

As described above, the sixth exemplary embodiment provides thefollowing advantageous effects. According to the sixth exemplaryembodiment, in addition to the advantageous effects provided by thefourth exemplary embodiment, reading in an ultra-high resistance statecan be performed by arranging an ultra-high resistance measurement mode.Namely, a read determination can be performed by switching a thresholdfor logic determination in a reading operation to a value higher thanthat used in a normal measurement mode.

Part or all of each of the above exemplary embodiments can be describedas the following modes. However, the above exemplary embodiments are notlimited to the following modes.

(Mode 1)

A semiconductor device including: a resistive memory element; a dataline electrically coupled to the resistive memory element; a controlline; a power supply line; and a control circuit including a firstconstant current element, a first transistor, and a second transistor,wherein, in the control circuit, the first transistor has a gate coupledto the data line, one of a source and a drain coupled to the firstconstant current element, and the other one of the source and the draincoupled to the power supply line, and wherein, in the control circuit,the second transistor has a gate coupled to one of the source and thedrain of the first transistor, one of a source and a drain coupled tothe data line, and the other one of the source and the drain coupled tothe control line.

(Mode 2)

The semiconductor device according to mode 1 further including; avoltage generator supplying a voltage to the power supply line, whereinthe voltage generator supplies a first voltage, which is a sum of afirst setting voltage applied to the data line and an absolute value ofa threshold voltage of the first transistor, to the power supply line.

(Mode 3)

The semiconductor device according to mode 1 or 2, wherein the firstcurrent element is a resistor.

(Mode 4)

The semiconductor device according to mode 1 or 2, wherein the firstconstant current element in the control circuit is configured by a thirdtransistor, wherein a first constant current source and a fourthtransistor that forms a current mirror circuit with the third transistorare arranged outside the control circuit, and wherein a current flowingthrough the third transistor is controlled by the current mirror circuiton the basis of a current flowing through the first constant currentsource.

(Mode 5)

The semiconductor device according to mode 4, wherein the voltagegenerator includes a fifth transistor having a gate and a drain suppliedwith the first setting voltage and having a source supplied with acurrent equivalent to that flowing through the first constant currentsource, and wherein the voltage generator uses a source voltage of thefifth transistor as a reference voltage and generates the first voltagecontrolled by the reference voltage.

(Mode 6)

The semiconductor device according to any one of modes 2 to 5, whereinthe control circuit includes a first switch element between a firstpower supply and the control line, and wherein the semiconductor deviceperforms a first control operation in which the first switch element isset in a conductive state and the first voltage is supplied from thevoltage generator to the power supply line to charge the data line withthe first setting voltage.

(Mode 7)

The semiconductor device according to mode 6 further including: a secondconstant current element supplying a constant current to the controlline, wherein, after the first control operation, the semiconductordevice performs a second control operation in which the first switchelement is set in a non-conductive state and the potential of thecontrol line is determined a predetermined time after the timing whenthe first switch element is set in a non-conductive state.

(Mode 8)

The semiconductor device according to mode 6, wherein the voltagegenerator is configured to supply the first voltage or a second voltage,which is a sum of a second setting voltage set lower than the firstsetting voltage and the absolute value of the threshold voltage of thefirst transistor, to the power supply line, and wherein, after the firstcontrol operation, the semiconductor device performs a third controloperation in which the first switch element is set in a non-conductivestate, the voltage generator changes the voltage supplied to the powersupply line to the second voltage, and the potential of the control lineis determined a predetermined time after the timing when the firstswitch element is set in a non-conductive state.

(Mode 9)

The semiconductor device according to mode 8 further including: areference resistance element; a reference data line coupled to thereference resistance element; a reference control line; and a referencecontrol circuit having substantially the same configuration as that ofthe control circuit and controlling the reference data line and thereference control line, instead of the data line and the control line,wherein, in the first control operation, the reference data line ischarged with the first setting voltage in the same way as the data line,and wherein, in the third control operation, the predetermined time isset on the basis of change of the potential of the reference controlline.

(Mode 10)

The semiconductor device according to mode 9, wherein, in the thirdcontrol operation, timing when the potential of the reference controlline is decreased in response to decrease of the potential of thereference data line to the second setting voltage is timing thatcorresponds to elapse of the predetermined time.

(Mode 11)

The semiconductor device according to any one of modes 2 to 10, whereinthe control circuit further includes: a write circuit including a latchcircuit storing write data and a data line drive circuit applying awrite voltage to the data line on the basis of the write data stored inthe latch circuit, wherein the write circuit is coupled to a first nodewhere one of the source and the drain of the first transistor is coupledto the gate of the second transistor, and wherein the write circuitinverts the write data stored in the latch circuit on the basis ofchange of the potential of the first node to inactivate the data linedrive circuit.

(Mode 12)

The semiconductor device according to mode 11, wherein the semiconductordevice performs a fourth control operation in which, if the write datastored in the latch circuit is compatible with a predetermined writeoperation, the data line drive circuit applies the write voltage to thedata line to write the data, and wherein, after the fourth controloperation, the semiconductor device performs a fifth control operationin which the application of the write voltage is stopped and thepotential of the control line is determined a predetermined time afterthe timing when the application of the write voltage is stopped.

(Mode 13)

The semiconductor device according to mode 12, wherein, in the fifthcontrol operation, if change of the potential of the first node is notdetected and if the write data stored in the latch circuit is notinverted, the fourth and fifth control operations are repeated.

(Mode 14)

The semiconductor device according to mode 12 or 13 further including: areference resistance element; a reference data line coupled to thereference resistance element; a reference control line; and a referencecontrol circuit having substantially the same configuration as that ofthe control circuit and controlling the reference data line and thereference control line, instead of the data line and the control line,wherein, in the fifth control operation, the predetermined time is seton the basis of change of the potential of a first reference node in thereference control circuit corresponding to the first node in the controlcircuit.

(Mode 15)

The semiconductor device according to mode 13 or 14, wherein, after thefifth control operation, verification is performed by a read operationincluding charging with the first setting voltage.

(Mode 16)

The semiconductor device according to mode 9 or 14 further including: asecond switch element and a first capacitive element having one endcoupled to the reference data line via the second switch element,wherein the semiconductor device is configured to be capable ofswitching modes between a first read operation performed while thesecond switch element is in a non-conductive state and a second readoperation performed while the second switch element is in a conductivestate.

(Mode 17)

The semiconductor device according to mode 16, wherein a determinationthreshold for a resistance state determined in the second read operationis higher than a determination threshold for a resistance statedetermined in the first read operation.

(Mode 18)

The semiconductor device according to any one of modes 1 to 17, whereina plurality of control circuits, each of which corresponds to thecontrol circuit and which share the power supply line, are aligned in afirst direction.

(Mode 19)

A semiconductor device including: a resistive memory element; a dataline electrically coupled to the resistive memory element; a controlline; a control circuit including a feedback circuit coupled to the dataline and controlling a potential of a second node, a second transistor,and a first switch element arranged between a first power supply and thecontrol line, wherein the second transistor has a gate coupled to anoutput node of the feedback circuit, one of a source and a drain coupledto the data line, and the other one of the source and the drain coupledto the control line, and wherein the feedback circuit includes a thirdswitch element between the second node and the output node of thefeedback circuit.

(Mode 20)

The semiconductor device according to mode 19, wherein the first andthird switch elements are set in a conductive state, and the feedbackcircuit controls the second node to have a higher potential when thepotential of the data line is lower than a first setting voltage andcontrols the second node to have a lower potential when the potential ofthe data line is higher than the first setting voltage.

(Mode 21)

The semiconductor device according to mode 19 or 20, further including asecond capacitive element having one terminal coupled to the output nodeof the feedback circuit and the other terminal supplied with a voltagewidth control signal whose amplitude can be controlled.

(Mode 22)

The semiconductor device according to mode 21, performing a firstcontrol operation in which the first and third switch elements are setin a conductive state and the data line is charged with the firstsetting voltage and performing, after the first control operation, asixth control operation in which the first and third switch elements areset in a non-conductive state and the voltage width control signal isdecreased by a predetermined amplitude voltage to determine thepotential decrease rate of the control line.

(Mode 23)

The semiconductor device according to mode 22, wherein the semiconductordevice determines the potential decrease rate of the control line in thesixth control operation by determining the potential of the control linea predetermined time after the timing when the first and third switchelements are set in a non-conductive state.

(Mode 24)

The semiconductor device according to mode 23 further including: areference resistance element; a reference data line coupled to thereference resistance element; a reference control line; and a referencecontrol circuit having substantially the same configuration as that ofthe control circuit and controlling the reference data line and thereference control line, instead of the data line and the control line,wherein, in the first control operation, the reference data line is alsocharged with the first setting voltage in the same way as the data line,and wherein, in the sixth control operation, the predetermined time isset on the basis of decrease of the potential of the reference controlline.

(Mode 25)

The semiconductor device according to any one of modes 19 to 24, whereinthe feedback circuit further includes: a first constant current element;and a first transistor having a gate coupled to the data line, one of asource and a drain coupled to the first constant current element, andthe other one of the source and the drain coupled to the power supplyline.

(Mode 26)

The semiconductor device according to mode 25 further including: avoltage generator supplying a voltage to the power supply line, whereinthe voltage generator supplies a first voltage, which is a sum of afirst setting voltage applied to the data line and an absolute value ofa threshold voltage of the first transistor, to the power supply line.

(Mode 27)

The semiconductor device according to mode 26, wherein the voltagegenerator supplies the first voltage to the power supply line in thefirst control operation and stops supplying the first voltage in thesixth control operation.

(Mode 28)

The semiconductor device according to any one of modes 25 to 27, whereinthe first constant current element is a resistor.

(Mode 29)

The semiconductor device according to any one of modes 25 to 27, whereinthe first constant current element in the control circuit is configuredby a third transistor, wherein a first constant current source and afourth transistor that forms a current mirror circuit with the thirdtransistor are arranged outside the control circuit, and wherein acurrent flowing through the third transistor is controlled by thecurrent mirror circuit on the basis of a current flowing through thefirst constant current source.

(Mode 30)

The semiconductor device according to mode 29, wherein the voltagegenerator includes a fifth transistor having a gate and a drain suppliedwith the first setting voltage and having a source supplied with acurrent equivalent to that flowing through the first constant currentsource, and wherein the voltage generator uses a source voltage of thefifth transistor as a reference voltage and generates the first voltagecontrolled by the reference voltage.

(Mode 31)

The semiconductor device according to mode 24 further including: asecond switch element and a first capacitive element having one endcoupled to the reference data line via the second switch element,wherein the semiconductor device is configured to be capable ofswitching modes between a first read operation performed while thesecond switch element is in a non-conductive state and a second readoperation performed while the second switch element is in a conductivestate.

(Mode 32)

The semiconductor device according to mode 31, wherein a determinationthreshold for a resistance state determined in the second read operationis higher than a determination threshold for a resistance statedetermined in the first read operation.

(Mode 33)

The semiconductor device according to any one of modes 19 to 32, whereina plurality of control circuits, each of which corresponds to thecontrol circuit and which share the power supply line, are aligned in afirst direction.

Modifications and adjustments of the exemplary embodiments are possiblewithin the scope of the overall disclosure (including the claims and thedrawings) of the present invention and based on the basic technicalconcepts of the present invention. Various combinations and selectionsof various disclosed elements (including the elements in each of theclaims, exemplary embodiments, drawings, etc.) are possible within theclaims of the present invention. That is, embodiments of the presentinvention of course include various variations and modifications thatcould be made by those skilled in the art according to the overalldisclosure including the claims and the drawings and the technicalconcept. The description discloses numerical value ranges. However, evenif the description does not particularly disclose arbitrary numericalvalues or small ranges included in the ranges, these values and rangesshould be deemed to have been specifically disclosed.

What is claimed is:
 1. A semiconductor device, comprising: a resistivememory element; a data line electrically coupled to the resistive memoryelement; a control line; a power supply line; and a control circuitcomprising a first constant current element, a first transistor, and asecond transistor, wherein, in the control circuit, the first transistorhas a gate coupled to the data line, one of a source and a drain coupledto the first constant current element, and the other one of the sourceand the drain coupled to the power supply line, and wherein, in thecontrol circuit, the second transistor has a gate coupled to one of thesource and the drain of the first transistor, one of a source and adrain coupled to the data line, and the other one of the source and thedrain coupled to the control line.
 2. The semiconductor device asclaimed in claim 1, further comprising: a voltage generator configuredto supply a voltage to the power supply line, wherein the voltagegenerator supplies a first voltage to the power supply line, wherein thefirst voltage is a sum of a first setting voltage applied to the dataline and an absolute value of a threshold voltage of the firsttransistor.
 3. The semiconductor device as claimed in claim 2, whereinthe control circuit comprises a first switch element coupled between afirst power supply and the control line, and wherein the semiconductordevice performs a first control operation in which the first switchelement is set in a conductive state and the first voltage is suppliedfrom the voltage generator to the power supply line to charge the dataline with the first setting voltage.
 4. The semiconductor device asclaimed in claim 3, further comprising: a second constant currentelement configured to supply a constant current to the control line,wherein, after the first control operation, the semiconductor deviceperforms a second control operation in which the first switch element isset in a non-conductive state and the potential of the control line isdetermined a predetermined time after the timing when the first switchelement is set in a non-conductive state.
 5. The semiconductor device asclaimed in claim 3, wherein the voltage generator is configured tosupply the first voltage or a second voltage to the power supply line,wherein the first voltage or the second voltage is a sum of a secondsetting voltage set lower than the first setting voltage and theabsolute value of the threshold voltage of the first transistor, andwherein, after the first control operation, the semiconductor deviceperforms a third control operation in which the first switch element isset in a non-conductive state, the voltage generator changes the voltagesupplied to the power supply line to the second voltage, and thepotential of the control line is determined a predetermined time afterthe timing when the first switch element is set in a non-conductivestate.
 6. The semiconductor device as claimed in claim 5, furthercomprising: a reference resistance element; a reference data linecoupled to the reference resistance element; a reference control line;and a reference control circuit having substantially the sameconfiguration as that of the control circuit and configured to controlthe reference data line and the reference control line, instead of thedata line and the control line, wherein, in the first control operation,the reference data line is charged with the first setting voltage in thesame way as the data line, and wherein, in the third control operation,the predetermined time is set on the basis of change of the potential ofthe reference control line.
 7. The semiconductor device as claimed inclaim 6, further comprising: a second switch element and a firstcapacitive element having one end coupled to the reference data line viathe second switch element, wherein the semiconductor device isconfigured to be capable of switching modes between a first readoperation performed while the second switch element is in anon-conductive state and a second read operation performed while thesecond switch element is in a conductive state.
 8. The semiconductordevice as claimed in claim 2, wherein the control circuit furthercomprises: a write circuit comprising a latch circuit configured tostore write data and a data line drive circuit configured to apply awrite voltage to the data line on the basis of the write data stored inthe latch circuit, wherein the write circuit is coupled to a first nodewhere one of the source and the drain of the first transistor is coupledto the gate of the second transistor, and wherein the write circuitinverts the write data stored in the latch circuit on the basis ofchange of the potential of the first node to inactivate the data linedrive circuit.
 9. The semiconductor device as claimed in claim 8,wherein the semiconductor device performs a fourth control operation inwhich, if the write data stored in the latch circuit is compatible witha predetermined write operation, the data line drive circuit applies thewrite voltage to the data line to write the data, and wherein, after thefourth control operation, the semiconductor device performs a fifthcontrol operation in which the application of the write voltage isstopped and the potential of the control line is determined apredetermined time after the timing when the application of the writevoltage is stopped.
 10. The semiconductor device as claimed in claim 9,wherein, in the fifth control operation, if change of the potential ofthe first node is not detected and if the write data stored in the latchcircuit is not inverted, the fourth and fifth control operations arerepeated.
 11. The semiconductor device as claimed in claim 9, furthercomprising: a reference resistance element; a reference data linecoupled to the reference resistance element; a reference control line;and a reference control circuit having substantially the sameconfiguration as that of the control circuit and configured to controlthe reference data line and the reference control line, instead of thedata line and the control line, wherein, in the fifth control operation,the predetermined time is set on the basis of change of the potential ofa first reference node in the reference control circuit corresponding tothe first node in the control circuit.
 12. The semiconductor device asclaimed in claim 1, wherein the first constant current element in thecontrol circuit is configured by a third transistor, wherein a firstconstant current source and a fourth transistor that forms a currentmirror circuit with the third transistor are arranged outside thecontrol circuit, and wherein a current flowing through the thirdtransistor is controlled by the current mirror circuit on the basis of acurrent flowing through the first constant current source.
 13. Asemiconductor device, comprising: a plurality of resistive memory cells;a plurality of first data lines coupled to the resistive memory cells,respectively; a plurality of second data lines; a voltage generatorconfigured to generate an internal voltage at an output node; aplurality of feedback circuits each coupled to a corresponding one ofthe first data lines, a corresponding one of the second data lines andthe output node of the voltage generator, and being configured to drivethe corresponding one of the second data lines in response to apotential of the corresponding one of the first data lines and theinternal voltage.
 14. The semiconductor device as claimed in claim 13,wherein the voltage generator is configured to be supplied with a firstexternal voltage which is lower than the internal voltage and a secondexternal voltage which is higher than the internal voltage.
 15. Thesemiconductor device as claimed in claim 13, wherein the voltagegenerator is configured to generate an additional voltage different fromthe internal voltage at an additional output node, each of the feedbackcircuits being coupled to the additional output node of the voltagegenerator, and each of the feedback circuits being configured to drivethe corresponding one of the second data lines in response to thepotential of the corresponding one of the first data lines, the internalvoltage and the additional internal voltage.
 16. The semiconductordevice as claimed in claim 13, wherein each of the feedback circuitscomprises a first constant current element, a first transistor and asecond transistor, and wherein, in each of the feedback circuits, thefirst transistor has a gate coupled to the first data line, one of asource and a drain coupled to the first constant current element, andthe other one of the source and the drain coupled to the output node ofthe voltage generator.
 17. The semiconductor device as claimed in claim16, wherein, in each of the feedback circuits, the second transistor hasa gate coupled to one of the source and the drain of the firsttransistor, one of a source and a drain coupled to the first data line,and the other one of the source and the drain coupled to the second dataline.
 18. The semiconductor device as claimed in claim 16, wherein thefirst constant current element in each of the feedback circuits isconfigured by a third transistor, and wherein a first constant currentsource and a fourth transistor that forms a current mirror circuit withthe third transistor are arranged outside each of the feedback circuits,and wherein a current of the third transistor is controlled by thecurrent mirror circuit on the basis of a current of the first constantcurrent source.
 19. The semiconductor device as claimed in claim 18,wherein each of the feedback circuits further comprises a switch elementcoupled between the second transistor and the third transistor.
 20. Thesemiconductor device as claimed in claim 19, wherein each of thefeedback circuits further comprises a capacitive element having oneterminal coupled to one of the source and the drain of the thirdtransistor and the other terminal supplied with a voltage width controlsignal whose amplitude can be controlled.